Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 033305 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 70 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 13 Juli 2004 |
Abstract
We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 70, Nr. 3, 033305, 13.07.2004.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Shot noise in tunneling through a single quantum dot
AU - Nauen, A.
AU - Hohls, F.
AU - Maire, N.
AU - Pierz, K.
AU - Haug, R. J.
N1 - Funding information: The authors would like to thank Gerold Kiesslich for enlightening discussions. We acknowledge financial support from DFG and BMBF.
PY - 2004/7/13
Y1 - 2004/7/13
N2 - We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.
AB - We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.
UR - http://www.scopus.com/inward/record.url?scp=37649029400&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.70.033305
DO - 10.1103/PhysRevB.70.033305
M3 - Article
AN - SCOPUS:37649029400
VL - 70
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 3
M1 - 033305
ER -