Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | PHYSICS OF SEMICONDUCTORS |
| Untertitel | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
| Seiten | 777-778 |
| Seitenumfang | 2 |
| Publikationsstatus | Veröffentlicht - 30 Juni 2005 |
| Veranstaltung | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, USA / Vereinigte Staaten Dauer: 26 Juli 2004 → 30 Juli 2004 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 772 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe this to the three-dimensional density of states of the emitter and collector and are able to model the voltage dependence using a master equation approach.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. S. 777-778 (AIP Conference Proceedings; Band 772).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Shot noise in tunneling through a single InAs quantum dot
AU - Hohls, Frank
AU - Nauen, André
AU - Maire, Niels
AU - Pierz, Klaus
AU - Haug, Rolf J.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe this to the three-dimensional density of states of the emitter and collector and are able to model the voltage dependence using a master equation approach.
AB - We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe this to the three-dimensional density of states of the emitter and collector and are able to model the voltage dependence using a master equation approach.
UR - http://www.scopus.com/inward/record.url?scp=33749471653&partnerID=8YFLogxK
U2 - 10.1063/1.1994337
DO - 10.1063/1.1994337
M3 - Conference contribution
AN - SCOPUS:33749471653
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 777
EP - 778
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -