Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1293-1296 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 0 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 23 Juni 2003 |
| Veranstaltung | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Dauer: 30 Sept. 2002 → 3 Okt. 2002 |
Abstract
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 0, Nr. 4, 23.06.2003, S. 1293-1296.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Shot noise in tunneling through a quantum dot array
AU - Kiesslich, G.
AU - Wacker, A.
AU - Schöll, E.
AU - Nauen, A.
AU - Hohls, F.
AU - Haug, R. J.
PY - 2003/6/23
Y1 - 2003/6/23
N2 - The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
AB - The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
UR - http://www.scopus.com/inward/record.url?scp=0242671287&partnerID=8YFLogxK
U2 - 10.1002/pssc.200303072
DO - 10.1002/pssc.200303072
M3 - Conference article
AN - SCOPUS:0242671287
VL - 0
SP - 1293
EP - 1296
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 4
T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002
Y2 - 30 September 2002 through 3 October 2002
ER -