Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 161303 |
| Seiten (von - bis) | 1-4 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 66 |
| Ausgabenummer | 16 |
| Publikationsstatus | Veröffentlicht - 4 Okt. 2002 |
Abstract
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor (formula presented) with an average value of (formula presented) consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in (formula presented) can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 66, Nr. 16, 161303, 04.10.2002, S. 1-4.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Shot noise in self-assembled InAs quantum dots
AU - Nauen, A.
AU - Hapke-Wurst, I.
AU - Hohls, F.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Pierz, K.
PY - 2002/10/4
Y1 - 2002/10/4
N2 - We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor (formula presented) with an average value of (formula presented) consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in (formula presented) can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
AB - We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor (formula presented) with an average value of (formula presented) consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in (formula presented) can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
UR - http://www.scopus.com/inward/record.url?scp=84875669538&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.66.161303
DO - 10.1103/PhysRevB.66.161303
M3 - Article
AN - SCOPUS:84875669538
VL - 66
SP - 1
EP - 4
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 16
M1 - 161303
ER -