Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 533-539 |
| Seitenumfang | 7 |
| Fachzeitschrift | Superlattices and microstructures |
| Jahrgang | 21 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - Juni 1997 |
Abstract
Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Superlattices and microstructures, Jahrgang 21, Nr. 4, 06.1997, S. 533-539.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Self-organized growth of quantum dot-tunnel barrier systems
AU - Dilger, M.
AU - Eberl, K.
AU - Haug, R. J.
AU - Von Klitzing, K.
N1 - Funding information: The authors are indebted to J. Weis for helpful discussions. We would like to thank B. Schönherr, C. Lange and F. Schartner for expert technological help and D. Galpin for a critical reading of the manuscript. This work was supported by the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie.
PY - 1997/6
Y1 - 1997/6
N2 - Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.
AB - Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.
KW - MBE-regrowth
KW - Single-electron transistor
KW - Transport measurements
UR - http://www.scopus.com/inward/record.url?scp=0030646057&partnerID=8YFLogxK
U2 - 10.1006/spmi.1996.0190
DO - 10.1006/spmi.1996.0190
M3 - Article
AN - SCOPUS:0030646057
VL - 21
SP - 533
EP - 539
JO - Superlattices and microstructures
JF - Superlattices and microstructures
SN - 0749-6036
IS - 4
ER -