Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 72-75 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica B: Physics of Condensed Matter |
| Jahrgang | 184 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - Feb. 1993 |
| Extern publiziert | Ja |
Abstract
We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Physica B: Physics of Condensed Matter, Jahrgang 184, Nr. 1-4, 02.1993, S. 72-75.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Scaling in the metal-insulator transition of the fractional quantum Hall effect
AU - Koch, S.
AU - Haug, R. J.
AU - von Klitzing, K.
AU - Ploog, K.
PY - 1993/2
Y1 - 1993/2
N2 - We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.
AB - We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.
UR - http://www.scopus.com/inward/record.url?scp=0027544204&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(93)90323-X
DO - 10.1016/0921-4526(93)90323-X
M3 - Article
AN - SCOPUS:0027544204
VL - 184
SP - 72
EP - 75
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 1-4
ER -