Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 27785 |
| Seitenumfang | 7 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 117 |
| Ausgabenummer | 23 |
| Publikationsstatus | Veröffentlicht - 8 Dez. 2020 |
Abstract
Two-dimensional (2D) materials with excellent optoelectronic properties have attracted tremendous research interest in recent years. The promising performances of photodetectors based on 2D materials, such as ultrafast photoresponse and ultrahigh photoresponsivity, have been demonstrated in the visible to short-wavelength infrared spectrum range (0.8-2 μm). However, high performance, room temperature operation long-wavelength infrared (LWIR) photodetection is challenging. The detectors based on graphene usually exhibit low photoresponsivity due to the low optical absorption and short carrier lifetime. In addition, the relatively large bandgap of transition metal dichalcogenides limited the photoresponse bandwidth. Here, we report a way to fabricate a scalable device array of room-temperature operation LWIR PtSe2-G heterostructure detectors. The photoresponsivity at 10.6 μm up to ∼300 mA/W is obtained. The long-wave infrared light in the pico-watt range could be detected at room temperature by the PtSe2-G heterostructure detector. This result indicates that the PtSe2-G heterostructure device could be a highly competitive candidate for an uncooled LWIR detector. It also opens a way for a scalable array infrared focus plane device for the LWIR image.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 117, Nr. 23, 27785, 08.12.2020.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Scalable fabrication of long-wave infrared PtSe2-G heterostructure array photodetectors
AU - Long, Mingsheng
AU - Liu, Fengkui
AU - Ding, Fei
AU - Wang, Yang
AU - Ye, Jiafu
AU - Xie, Runzhang
AU - Wang, Hao
AU - Xu, Mengjian
AU - Wang, Fang
AU - Tu, Yubing
AU - Han, Tao
AU - Li, Feng
AU - Zhang, Zongyuan
AU - Liu, Liwei
N1 - Publisher Copyright: © 2020 Author(s).
PY - 2020/12/8
Y1 - 2020/12/8
N2 - Two-dimensional (2D) materials with excellent optoelectronic properties have attracted tremendous research interest in recent years. The promising performances of photodetectors based on 2D materials, such as ultrafast photoresponse and ultrahigh photoresponsivity, have been demonstrated in the visible to short-wavelength infrared spectrum range (0.8-2 μm). However, high performance, room temperature operation long-wavelength infrared (LWIR) photodetection is challenging. The detectors based on graphene usually exhibit low photoresponsivity due to the low optical absorption and short carrier lifetime. In addition, the relatively large bandgap of transition metal dichalcogenides limited the photoresponse bandwidth. Here, we report a way to fabricate a scalable device array of room-temperature operation LWIR PtSe2-G heterostructure detectors. The photoresponsivity at 10.6 μm up to ∼300 mA/W is obtained. The long-wave infrared light in the pico-watt range could be detected at room temperature by the PtSe2-G heterostructure detector. This result indicates that the PtSe2-G heterostructure device could be a highly competitive candidate for an uncooled LWIR detector. It also opens a way for a scalable array infrared focus plane device for the LWIR image.
AB - Two-dimensional (2D) materials with excellent optoelectronic properties have attracted tremendous research interest in recent years. The promising performances of photodetectors based on 2D materials, such as ultrafast photoresponse and ultrahigh photoresponsivity, have been demonstrated in the visible to short-wavelength infrared spectrum range (0.8-2 μm). However, high performance, room temperature operation long-wavelength infrared (LWIR) photodetection is challenging. The detectors based on graphene usually exhibit low photoresponsivity due to the low optical absorption and short carrier lifetime. In addition, the relatively large bandgap of transition metal dichalcogenides limited the photoresponse bandwidth. Here, we report a way to fabricate a scalable device array of room-temperature operation LWIR PtSe2-G heterostructure detectors. The photoresponsivity at 10.6 μm up to ∼300 mA/W is obtained. The long-wave infrared light in the pico-watt range could be detected at room temperature by the PtSe2-G heterostructure detector. This result indicates that the PtSe2-G heterostructure device could be a highly competitive candidate for an uncooled LWIR detector. It also opens a way for a scalable array infrared focus plane device for the LWIR image.
UR - http://www.scopus.com/inward/record.url?scp=85097912899&partnerID=8YFLogxK
U2 - 10.1063/5.0027785
DO - 10.1063/5.0027785
M3 - Article
AN - SCOPUS:85097912899
VL - 117
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 23
M1 - 27785
ER -