Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 241117 |
| Seiten (von - bis) | 1-3 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied Physics Letters |
| Jahrgang | 87 |
| Ausgabenummer | 24 |
| Publikationsstatus | Veröffentlicht - 8 Dez. 2005 |
Abstract
We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied Physics Letters, Jahrgang 87, Nr. 24, 241117, 08.12.2005, S. 1-3.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons
AU - Rudolph, Jörg
AU - Döhrmann, Stephanie
AU - Hägele, Daniel
AU - Oestreich, Michael
AU - Stolz, W.
N1 - Funding information: The authors would like to thank Infineon Technologies for growing and providing the sample. The work is financially supported by the BMBF and DFG.
PY - 2005/12/8
Y1 - 2005/12/8
N2 - We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.
AB - We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.
UR - http://www.scopus.com/inward/record.url?scp=30344479963&partnerID=8YFLogxK
U2 - 10.1063/1.2146064
DO - 10.1063/1.2146064
M3 - Article
AN - SCOPUS:30344479963
VL - 87
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 241117
ER -