Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons

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OriginalspracheEnglisch
Aufsatznummer241117
Seiten (von - bis)1-3
Seitenumfang3
FachzeitschriftApplied Physics Letters
Jahrgang87
Ausgabenummer24
PublikationsstatusVeröffentlicht - 8 Dez. 2005

Abstract

We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.

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Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons. / Rudolph, Jörg; Döhrmann, Stephanie; Hägele, Daniel et al.
in: Applied Physics Letters, Jahrgang 87, Nr. 24, 241117, 08.12.2005, S. 1-3.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Rudolph, Jörg ; Döhrmann, Stephanie ; Hägele, Daniel et al. / Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons. in: Applied Physics Letters. 2005 ; Jahrgang 87, Nr. 24. S. 1-3.
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abstract = "We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.",
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AU - Rudolph, Jörg

AU - Döhrmann, Stephanie

AU - Hägele, Daniel

AU - Oestreich, Michael

AU - Stolz, W.

N1 - Funding information: The authors would like to thank Infineon Technologies for growing and providing the sample. The work is financially supported by the BMBF and DFG.

PY - 2005/12/8

Y1 - 2005/12/8

N2 - We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.

AB - We experimentally demonstrate the reduction of the laser threshold of a commercial GaAs (AlGa) As vertical-cavity surface-emitting laser (VCSEL) by optical injection of spin-polarized electrons at room temperature. Calculations with a rate-equation model reproduce the measured reduction of 2.5% for injected electrons with 50% spin polarization. The model predicts an improved threshold reduction of 50% in otherwise identical VCSELs grown on a (110) substrate due to the enhanced spin lifetime in such structures.

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DO - 10.1063/1.2146064

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JO - Applied Physics Letters

JF - Applied Physics Letters

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