Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Ajit K. Katiyar
  • Andreas Grimm
  • R. Bar
  • Jan Schmidt
  • Tobias Wietler
  • H. Joerg Osten
  • Samit K. Ray

Organisationseinheiten

Externe Organisationen

  • Indian Institute of Technology Kharagpur (IITKGP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer435204
FachzeitschriftNANOTECHNOLOGY
Jahrgang27
Ausgabenummer43
PublikationsstatusVeröffentlicht - 23 Sept. 2016

Abstract

Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

ASJC Scopus Sachgebiete

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Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films. / Katiyar, Ajit K.; Grimm, Andreas; Bar, R. et al.
in: NANOTECHNOLOGY, Jahrgang 27, Nr. 43, 435204, 23.09.2016.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Katiyar, A. K., Grimm, A., Bar, R., Schmidt, J., Wietler, T., Osten, H. J., & Ray, S. K. (2016). Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films. NANOTECHNOLOGY, 27(43), Artikel 435204. https://doi.org/10.1088/0957-4484/27/43/435204
Katiyar AK, Grimm A, Bar R, Schmidt J, Wietler T, Osten HJ et al. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films. NANOTECHNOLOGY. 2016 Sep 23;27(43):435204. doi: 10.1088/0957-4484/27/43/435204
Katiyar, Ajit K. ; Grimm, Andreas ; Bar, R. et al. / Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films. in: NANOTECHNOLOGY. 2016 ; Jahrgang 27, Nr. 43.
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title = "Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films",
abstract = "Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.",
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T1 - Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

AU - Katiyar, Ajit K.

AU - Grimm, Andreas

AU - Bar, R.

AU - Schmidt, Jan

AU - Wietler, Tobias

AU - Osten, H. Joerg

AU - Ray, Samit K.

N1 - Funding Information: Authors are grateful to DAAD funded program 'A New Passage to India' for providing financial support to carry out this work.

PY - 2016/9/23

Y1 - 2016/9/23

N2 - Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

AB - Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

KW - molicular beam epitaxy

KW - photoluminescence

KW - RSG substrate

KW - strained Ge films

KW - surfactant mediated growth

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