Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 245-253 |
| Seitenumfang | 9 |
| Fachzeitschrift | Physica Status Solidi (A) Applications and Materials Science |
| Jahrgang | 207 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - Feb. 2010 |
Abstract
The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high-energy electron diffraction (RHEED). The development of the boron-covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS) as function of boron coverage (c B) and annealing condition. We found a direct correlation between the appearance of surface states in UPS and the transient growth behaviour observed in RHEED. For c B > 0.4 monolayer (ML) regular RHEED oscillations occur with a period typically for two bilayers (BLs), whereas for lower c B a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. The appearance of this transient behaviour is discussed in terms of an initial surface defect-induced nucleation of BL-high Si islands and the formation of two BLs-high Si islands on top of the van der Waals-like perfect boron-covered surface, respectively. The occurrence of surface defects for c B < 0.6 ML is clearly established in UPS measurements, where an intensity peak slightly below the Fermi level (-0.4 eV) was visible. We suggest that this surface defect level is related to Si adatom dangling bonds acting also as preferential nucleation centres in epitaxy. Furthermore, surface defects results in a significant Fermi level pinning.
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- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Physica Status Solidi (A) Applications and Materials Science, Jahrgang 207, Nr. 2, 02.2010, S. 245-253.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Role of boron and (√3×√3)-B surface defects on the growth mode of Si on Si(111)
T2 - A photoemission and electron diffraction study
AU - Fissel, Andreas
AU - Krügener, Jan
AU - Schwendt, Dominik
AU - Osten, H. Jörg
PY - 2010/2
Y1 - 2010/2
N2 - The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high-energy electron diffraction (RHEED). The development of the boron-covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS) as function of boron coverage (c B) and annealing condition. We found a direct correlation between the appearance of surface states in UPS and the transient growth behaviour observed in RHEED. For c B > 0.4 monolayer (ML) regular RHEED oscillations occur with a period typically for two bilayers (BLs), whereas for lower c B a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. The appearance of this transient behaviour is discussed in terms of an initial surface defect-induced nucleation of BL-high Si islands and the formation of two BLs-high Si islands on top of the van der Waals-like perfect boron-covered surface, respectively. The occurrence of surface defects for c B < 0.6 ML is clearly established in UPS measurements, where an intensity peak slightly below the Fermi level (-0.4 eV) was visible. We suggest that this surface defect level is related to Si adatom dangling bonds acting also as preferential nucleation centres in epitaxy. Furthermore, surface defects results in a significant Fermi level pinning.
AB - The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high-energy electron diffraction (RHEED). The development of the boron-covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS) as function of boron coverage (c B) and annealing condition. We found a direct correlation between the appearance of surface states in UPS and the transient growth behaviour observed in RHEED. For c B > 0.4 monolayer (ML) regular RHEED oscillations occur with a period typically for two bilayers (BLs), whereas for lower c B a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. The appearance of this transient behaviour is discussed in terms of an initial surface defect-induced nucleation of BL-high Si islands and the formation of two BLs-high Si islands on top of the van der Waals-like perfect boron-covered surface, respectively. The occurrence of surface defects for c B < 0.6 ML is clearly established in UPS measurements, where an intensity peak slightly below the Fermi level (-0.4 eV) was visible. We suggest that this surface defect level is related to Si adatom dangling bonds acting also as preferential nucleation centres in epitaxy. Furthermore, surface defects results in a significant Fermi level pinning.
UR - http://www.scopus.com/inward/record.url?scp=76949106429&partnerID=8YFLogxK
U2 - 10.1002/pssa.200982433
DO - 10.1002/pssa.200982433
M3 - Article
AN - SCOPUS:76949106429
VL - 207
SP - 245
EP - 253
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 2
ER -