Robust and Resource-Efficient Microwave Near-Field Entangling ^{9}Be^{+} Gate

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OriginalspracheEnglisch
Aufsatznummer260503
FachzeitschriftPhysical review letters
Jahrgang123
Ausgabenummer26
Frühes Online-Datum26 Dez. 2019
PublikationsstatusVeröffentlicht - 31 Dez. 2019

Abstract

Microwave trapped-ion quantum logic gates avoid spontaneous emission as a fundamental source of decoherence. However, microwave two-qubit gates are still slower than laser-induced gates and hence more sensitive to fluctuations and noise of the motional mode frequency. We propose and implement amplitude-shaped gate drives to obtain resilience to such frequency changes without increasing the pulse energy per gate operation. We demonstrate the resilience by noise injection during a two-qubit entangling gate with ^{9}Be^{+} ion qubits. In the absence of injected noise, amplitude modulation gives an operation infidelity in the 10^{-3} range.

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Robust and Resource-Efficient Microwave Near-Field Entangling ^{9}Be^{+} Gate. / Zarantonello, G.; Hahn, H.; Schulte, M. et al.
in: Physical review letters, Jahrgang 123, Nr. 26, 260503, 31.12.2019.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Zarantonello G, Hahn H, Schulte M, Bautista-Salvador A, Werner RF, Hammerer K et al. Robust and Resource-Efficient Microwave Near-Field Entangling ^{9}Be^{+} Gate. Physical review letters. 2019 Dez 31;123(26):260503. Epub 2019 Dez 26. doi: 10.48550/arXiv.1911.03954, 10.1103/PhysRevLett.123.260503
Zarantonello, G. ; Hahn, H. ; Schulte, M. et al. / Robust and Resource-Efficient Microwave Near-Field Entangling ^{9}Be^{+} Gate. in: Physical review letters. 2019 ; Jahrgang 123, Nr. 26.
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AU - Hahn, H.

AU - Schulte, M.

AU - Bautista-Salvador, A.

AU - Werner, R. F.

AU - Hammerer, K.

AU - Ospelkaus, C.

AU - Morgner, J.

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