Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autorschaft

  • P. Engelhart
  • N. P. Harder
  • A. Merkle
  • R. Grischke
  • R. Meyer
  • R. Brendel

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Herausgeber (Verlag)IEEE Computer Society
Seiten900-904
Seitenumfang5
ISBN (Print)1424400163, 9781424400164, 1-4244-0017-1
PublikationsstatusVeröffentlicht - 2006
Extern publiziertJa
Veranstaltung2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, HI, USA / Vereinigte Staaten
Dauer: 7 Mai 2006 → 12 Mai 2006
Konferenznummer: 4

Abstract

We employ laser technology as a key processing tool for fabricating our novel RISE (Rear Interdigitated Single Evaporation) silicon solar cells. The contactless production sequence incorporates a self-aligning single evaporation step for metallising the interdigitated rear contacts. In this paper, we compare in detail the performance of two types of RISE solar cells with different contact formations to the base: (a) back surface field formation via aluminium doping produced by local laser-firing of the aluminium contact (Al-BSF) and (b) local diffusion of boron (B-BSF). The best solar cell with B-BSF has an AM1.5 efficiency of 21.5 %. The efficiencies of RISE solar cells with Al-BSF are considerably lower due to 5-10% lower short-circuit currents. We ascribe these photocurrent losses to a less-efficient BSF effect of the laser-fired contact compared to a boron-diffused BSF.

ASJC Scopus Sachgebiete

Ziele für nachhaltige Entwicklung

Zitieren

Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. / Engelhart, P.; Harder, N. P.; Merkle, A. et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. S. 900-904 4059774.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Engelhart, P, Harder, NP, Merkle, A, Grischke, R, Meyer, R & Brendel, R 2006, Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059774, IEEE Computer Society, S. 900-904, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, HI, USA / Vereinigte Staaten, 7 Mai 2006. https://doi.org/10.1109/WCPEC.2006.279601
Engelhart, P., Harder, N. P., Merkle, A., Grischke, R., Meyer, R., & Brendel, R. (2006). Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (S. 900-904). Artikel 4059774 IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279601
Engelhart P, Harder NP, Merkle A, Grischke R, Meyer R, Brendel R. Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. S. 900-904. 4059774 doi: 10.1109/WCPEC.2006.279601
Engelhart, P. ; Harder, N. P. ; Merkle, A. et al. / Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. S. 900-904
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abstract = "We employ laser technology as a key processing tool for fabricating our novel RISE (Rear Interdigitated Single Evaporation) silicon solar cells. The contactless production sequence incorporates a self-aligning single evaporation step for metallising the interdigitated rear contacts. In this paper, we compare in detail the performance of two types of RISE solar cells with different contact formations to the base: (a) back surface field formation via aluminium doping produced by local laser-firing of the aluminium contact (Al-BSF) and (b) local diffusion of boron (B-BSF). The best solar cell with B-BSF has an AM1.5 efficiency of 21.5 %. The efficiencies of RISE solar cells with Al-BSF are considerably lower due to 5-10% lower short-circuit currents. We ascribe these photocurrent losses to a less-efficient BSF effect of the laser-fired contact compared to a boron-diffused BSF.",
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note = "Funding Information: The financial support by the State of Lower Saxony and the German Federal Government is gratefully acknowledged. The ISFH is a member of the Forschungsverbund Sonnenenergie e.V; 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) ; Conference date: 07-05-2006 Through 12-05-2006",
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