Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of the 25th International Conference on the Physics of Semiconductors |
| Seiten | 833-834 |
| Band | 1 |
| ISBN (elektronisch) | 978-3-642-63993-7 |
| Publikationsstatus | Veröffentlicht - 2001 |
| Veranstaltung | 25th International Conference on the Physics of Semiconductors - Osaka, Japan Dauer: 17 Sept. 2000 → 22 Sept. 2000 |
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Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature. / König, P.; Zeitler, U.; Könemann, J. et al.
Proceedings of the 25th International Conference on the Physics of Semiconductors. Band 1 2001. S. 833-834.
Proceedings of the 25th International Conference on the Physics of Semiconductors. Band 1 2001. S. 833-834.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Beitrag in Buch/Sammelwerk › Forschung
König, P, Zeitler, U, Könemann, J, Schmidt, T & Haug, RJ 2001, Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature. in Proceedings of the 25th International Conference on the Physics of Semiconductors. Bd. 1, S. 833-834, 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 17 Sept. 2000.
König, P., Zeitler, U., Könemann, J., Schmidt, T., & Haug, R. J. (2001). Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature. In Proceedings of the 25th International Conference on the Physics of Semiconductors (Band 1, S. 833-834)
König P, Zeitler U, Könemann J, Schmidt T, Haug RJ. Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature. in Proceedings of the 25th International Conference on the Physics of Semiconductors. Band 1. 2001. S. 833-834
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title = "Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature",
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T1 - Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature
AU - König, P.
AU - Zeitler, U.
AU - Könemann, J.
AU - Schmidt, T.
AU - Haug, R. J.
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BT - Proceedings of the 25th International Conference on the Physics of Semiconductors
T2 - 25th International Conference on the Physics of Semiconductors
Y2 - 17 September 2000 through 22 September 2000
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