Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • O. G. Schmidt
  • U. Denker
  • K. Eberl
  • O. Kienzle
  • F. Ernst
  • R. J. Haug

Organisationseinheiten

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Max-Planck-Institut für Intelligente Systeme (Stuttgart)
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Details

OriginalspracheEnglisch
Seiten (von - bis)4341-4343
Seitenumfang3
FachzeitschriftApplied Physics Letters
Jahrgang77
Ausgabenummer26
PublikationsstatusVeröffentlicht - 19 Dez. 2000

Abstract

Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.

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Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. / Schmidt, O. G.; Denker, U.; Eberl, K. et al.
in: Applied Physics Letters, Jahrgang 77, Nr. 26, 19.12.2000, S. 4341-4343.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Schmidt OG, Denker U, Eberl K, Kienzle O, Ernst F, Haug RJ. Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. Applied Physics Letters. 2000 Dez 19;77(26):4341-4343. doi: 10.1063/1.1332817, 10.15488/2828
Schmidt, O. G. ; Denker, U. ; Eberl, K. et al. / Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. in: Applied Physics Letters. 2000 ; Jahrgang 77, Nr. 26. S. 4341-4343.
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