Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 4341-4343 |
Seitenumfang | 3 |
Fachzeitschrift | Applied Physics Letters |
Jahrgang | 77 |
Ausgabenummer | 26 |
Publikationsstatus | Veröffentlicht - 19 Dez. 2000 |
Abstract
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied Physics Letters, Jahrgang 77, Nr. 26, 19.12.2000, S. 4341-4343.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands
AU - Schmidt, O. G.
AU - Denker, U.
AU - Eberl, K.
AU - Kienzle, O.
AU - Ernst, F.
AU - Haug, R. J.
PY - 2000/12/19
Y1 - 2000/12/19
N2 - Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.
AB - Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.
UR - http://www.scopus.com/inward/record.url?scp=0000323726&partnerID=8YFLogxK
U2 - 10.1063/1.1332817
DO - 10.1063/1.1332817
M3 - Article
AN - SCOPUS:0000323726
VL - 77
SP - 4341
EP - 4343
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
ER -