Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 659-663 |
| Seitenumfang | 5 |
| Fachzeitschrift | Materials Science in Semiconductor Processing |
| Jahrgang | 9 |
| Ausgabenummer | 4-5 SPEC. ISS. |
| Publikationsstatus | Veröffentlicht - Aug. 2006 |
Abstract
In this work, we investigated the residual strain in Ge films of varying thickness (50 nm-1 μm) grown by SME on Si(1 1 1) and Si(0 0 1). The in-plane and vertical lattice constants were measured by high-resolution X-ray diffraction recording reciprocal space maps of symmetrical and asymmetrical reflections. We observed a gradual decrease of residual strain with film thickness, that represents the respective equilibrium state for the relaxation of lattice mismatch induced strain and thermal strain caused by different thermal expansion of Ge and Si. The minimum thickness for full relaxation is found to be ∼260 nm on Si(1 1 1) and ∼140 nm on Si(0 0 1).
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- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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in: Materials Science in Semiconductor Processing, Jahrgang 9, Nr. 4-5 SPEC. ISS., 08.2006, S. 659-663.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(1 1 1) and Si(0 0 1) substrates
AU - Wietler, Tobias F.
AU - Bugiel, Eberhard
AU - Hofmann, Karl R.
PY - 2006/8
Y1 - 2006/8
N2 - In this work, we investigated the residual strain in Ge films of varying thickness (50 nm-1 μm) grown by SME on Si(1 1 1) and Si(0 0 1). The in-plane and vertical lattice constants were measured by high-resolution X-ray diffraction recording reciprocal space maps of symmetrical and asymmetrical reflections. We observed a gradual decrease of residual strain with film thickness, that represents the respective equilibrium state for the relaxation of lattice mismatch induced strain and thermal strain caused by different thermal expansion of Ge and Si. The minimum thickness for full relaxation is found to be ∼260 nm on Si(1 1 1) and ∼140 nm on Si(0 0 1).
AB - In this work, we investigated the residual strain in Ge films of varying thickness (50 nm-1 μm) grown by SME on Si(1 1 1) and Si(0 0 1). The in-plane and vertical lattice constants were measured by high-resolution X-ray diffraction recording reciprocal space maps of symmetrical and asymmetrical reflections. We observed a gradual decrease of residual strain with film thickness, that represents the respective equilibrium state for the relaxation of lattice mismatch induced strain and thermal strain caused by different thermal expansion of Ge and Si. The minimum thickness for full relaxation is found to be ∼260 nm on Si(1 1 1) and ∼140 nm on Si(0 0 1).
KW - Germanium
KW - Residual strain
KW - Silicon
KW - Surfactant-mediated epitaxy
UR - http://www.scopus.com/inward/record.url?scp=33845219229&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2006.08.014
DO - 10.1016/j.mssp.2006.08.014
M3 - Article
AN - SCOPUS:33845219229
VL - 9
SP - 659
EP - 663
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 4-5 SPEC. ISS.
ER -