Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 272-274 |
| Seitenumfang | 3 |
| Fachzeitschrift | THIN SOLID FILMS |
| Jahrgang | 517 |
| Ausgabenummer | 1 |
| Frühes Online-Datum | 13 Aug. 2008 |
| Publikationsstatus | Veröffentlicht - 3 Nov. 2008 |
Abstract
Direct growth of relaxed Ge layers on Si(110) substrates with low defect densities was achieved by surfactant-mediated epitaxy (SME) with Sb as a surfactant. Deposition of Ge at a substrate temperature of 670 °C resulted in complete relaxation of the lattice mismatch. A residual 0.18% tensile strain was found caused by the thermal mismatch between Ge and Si. No stacking faults were detected in the films. This is ascribed to an abrupt strain release during the initial micro-rough growth phase similar to the one observed in SME on Si(100) and Si(111).
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Metalle und Legierungen
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: THIN SOLID FILMS, Jahrgang 517, Nr. 1, 03.11.2008, S. 272-274.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Relaxed germanium films on silicon (110)
AU - Wietler, Tobias F.
AU - Bugiel, Eberhard
AU - Hofmann, Karl R.
PY - 2008/11/3
Y1 - 2008/11/3
N2 - Direct growth of relaxed Ge layers on Si(110) substrates with low defect densities was achieved by surfactant-mediated epitaxy (SME) with Sb as a surfactant. Deposition of Ge at a substrate temperature of 670 °C resulted in complete relaxation of the lattice mismatch. A residual 0.18% tensile strain was found caused by the thermal mismatch between Ge and Si. No stacking faults were detected in the films. This is ascribed to an abrupt strain release during the initial micro-rough growth phase similar to the one observed in SME on Si(100) and Si(111).
AB - Direct growth of relaxed Ge layers on Si(110) substrates with low defect densities was achieved by surfactant-mediated epitaxy (SME) with Sb as a surfactant. Deposition of Ge at a substrate temperature of 670 °C resulted in complete relaxation of the lattice mismatch. A residual 0.18% tensile strain was found caused by the thermal mismatch between Ge and Si. No stacking faults were detected in the films. This is ascribed to an abrupt strain release during the initial micro-rough growth phase similar to the one observed in SME on Si(100) and Si(111).
KW - Germanium
KW - Growth mechanism
KW - Molecular beam epitaxy (MBE)
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=54849405498&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2008.08.018
DO - 10.1016/j.tsf.2008.08.018
M3 - Article
AN - SCOPUS:54849405498
VL - 517
SP - 272
EP - 274
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1
ER -