Relative specific heat at v = 1/2 measured in a phonon absorption experiment

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

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  • Radboud Universität Nijmegen (RU)
  • Ruhr-Universität Bochum
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OriginalspracheEnglisch
Titel des SammelwerksPHYSICS OF SEMICONDUCTORS
Untertitel27th International Conference on the Physics of Semiconductors, ICPS-27
Seiten503-504
Seitenumfang2
PublikationsstatusVeröffentlicht - 30 Juni 2005
VeranstaltungPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, USA / Vereinigte Staaten
Dauer: 26 Juli 200430 Juli 2004

Publikationsreihe

NameAIP Conference Proceedings
Band772
ISSN (Print)0094-243X
ISSN (elektronisch)1551-7616

Abstract

In general it is far from being straightforward to measure the specific heat of a single two-dimensional electron system directly, since it is strongly dominated by the contribution of the substrate. Using a time-resolved phonon absorption technique, we have directly measured the specific heat C of composite fermions at half Landau level filling v = 1/2. We find a nearly linear dependence of C on temperature down to T = 0.1 K.

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Relative specific heat at v = 1/2 measured in a phonon absorption experiment. / Schulze-Wischeler, F.; Hohls, F.; Zeitler, U. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. S. 503-504 (AIP Conference Proceedings; Band 772).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Schulze-Wischeler, F, Hohls, F, Zeitler, U, Reuter, D, Wieck, AD & Haug, RJ 2005, Relative specific heat at v = 1/2 measured in a phonon absorption experiment. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, Bd. 772, S. 503-504, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, USA / Vereinigte Staaten, 26 Juli 2004. https://doi.org/10.1063/1.1994204
Schulze-Wischeler, F., Hohls, F., Zeitler, U., Reuter, D., Wieck, A. D., & Haug, R. J. (2005). Relative specific heat at v = 1/2 measured in a phonon absorption experiment. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (S. 503-504). (AIP Conference Proceedings; Band 772). https://doi.org/10.1063/1.1994204
Schulze-Wischeler F, Hohls F, Zeitler U, Reuter D, Wieck AD, Haug RJ. Relative specific heat at v = 1/2 measured in a phonon absorption experiment. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. S. 503-504. (AIP Conference Proceedings). doi: 10.1063/1.1994204
Schulze-Wischeler, F. ; Hohls, F. ; Zeitler, U. et al. / Relative specific heat at v = 1/2 measured in a phonon absorption experiment. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. S. 503-504 (AIP Conference Proceedings).
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AU - Zeitler, U.

AU - Reuter, D.

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