Relating wetting and reduction processes in the Si-liquid/SiO2-solid interface

L.D. Alphei; R. Grotjahn; C. Dobbe; M. Douvidzon; R. Janhsen; T. Gebensleben; T. Alznauer; V. Becker; J.A. Becker

doi:10.1016/j.jcrysgro.2015.03.003

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Originalsprache	undefiniert/unbekannt
Fachzeitschrift	Journal of crystal growth
Publikationsstatus	Veröffentlicht - 2015

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Relating wetting and reduction processes in the Si-liquid/SiO₂-solid interface. / Alphei, L.D.; Grotjahn, R.; Dobbe, C. et al.
in: Journal of crystal growth, 2015.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Alphei, LD, Grotjahn, R, Dobbe, C, Douvidzon, M, Janhsen, R, Gebensleben, T, Alznauer, T, Becker, V & Becker, JA 2015, 'Relating wetting and reduction processes in the Si-liquid/SiO₂-solid interface', Journal of crystal growth. https://doi.org/10.1016/j.jcrysgro.2015.03.003

Alphei, L. D., Grotjahn, R., Dobbe, C., Douvidzon, M., Janhsen, R., Gebensleben, T., Alznauer, T., Becker, V., & Becker, J. A. (2015). Relating wetting and reduction processes in the Si-liquid/SiO₂-solid interface. Journal of crystal growth. https://doi.org/10.1016/j.jcrysgro.2015.03.003

Alphei LD, Grotjahn R, Dobbe C, Douvidzon M, Janhsen R, Gebensleben T et al. Relating wetting and reduction processes in the Si-liquid/SiO₂-solid interface. Journal of crystal growth. 2015. doi: 10.1016/j.jcrysgro.2015.03.003

Alphei, L.D. ; Grotjahn, R. ; Dobbe, C. et al. / Relating wetting and reduction processes in the Si-liquid/SiO₂-solid interface. in: Journal of crystal growth. 2015.

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title = "Relating wetting and reduction processes in the Si-liquid/SiO2-solid interface",

author = "L.D. Alphei and R. Grotjahn and C. Dobbe and M. Douvidzon and R. Janhsen and T. Gebensleben and T. Alznauer and V. Becker and J.A. Becker",

note = "Funding information: We are grateful to Wacker Siltronics for the provided ultrapure silicon. C. Dobbe is supported by a Deutschland-Stipendium and R. Grotjahn by the Studienstiftung des deutschen Volkes . We acknowledge discussions with Prof. P. Heitjans about anisotropic diffusion in solids and with Prof. R. Imbihl concerning surface diffusion questions.",

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TY - JOUR

T1 - Relating wetting and reduction processes in the Si-liquid/SiO2-solid interface

AU - Alphei, L.D.

AU - Grotjahn, R.

AU - Dobbe, C.

AU - Douvidzon, M.

AU - Janhsen, R.

AU - Gebensleben, T.

AU - Alznauer, T.

AU - Becker, V.

AU - Becker, J.A.

N1 - Funding information: We are grateful to Wacker Siltronics for the provided ultrapure silicon. C. Dobbe is supported by a Deutschland-Stipendium and R. Grotjahn by the Studienstiftung des deutschen Volkes . We acknowledge discussions with Prof. P. Heitjans about anisotropic diffusion in solids and with Prof. R. Imbihl concerning surface diffusion questions.

PY - 2015

Y1 - 2015

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84926197293&partnerID=MN8TOARS

U2 - 10.1016/j.jcrysgro.2015.03.003

DO - 10.1016/j.jcrysgro.2015.03.003

M3 - Article

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

ER -

Research@Leibniz University

Relating wetting and reduction processes in the Si-liquid/SiO₂-solid interface

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