Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
| Herausgeber/-innen | Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron |
| Herausgeber (Verlag) | American Institute of Physics Inc. |
| ISBN (Print) | 9780735417151 |
| Publikationsstatus | Veröffentlicht - 10 Aug. 2018 |
| Veranstaltung | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Schweiz Dauer: 19 März 2018 → 21 März 2018 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 1999 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
The hole-conducting polymer PEDOT:PSS is known to effectively passivate crystalline silicon (c-Si) surfaces and at the same time provide a low contact resistance for holes. PEDOT:PSS can hence be used as a hole-selective contact layer at the rear side of a silicon solar cell. We investigate the influence of the transparency and thickness of the PEDOT: PSS layer on the parasitic infrared absorption in the PEDOT:PSS layer on the rear of a silicon solar cell. We find that a decrease of PEDOT:PSS layer thickness reduces the parasitic absorption in the PEDOT:PSS layer. Reflectance measurements show an increase of escape reflection in the long-wavelengths range for decreasing PEDOT:PSS layer thicknesses. On solar cells with an active area of 4 cm2, we observe an increase of the short-circuit current density Jsc of (0.6 ± 0.3) mA/cm2, from (37.7 ± 0.1) mA/cm2 to (38.3 ± 0.2) mA/cm2, by decreasing the PEDOT:PSS layer thickness from (301 ± 23) nm to (67 ± 8) nm. In addition, we show that additives that increase the transparency of the PEDOT:PSS layer can be used for effectively reducing the parasitic infrared absorption in the PEDOT:PSS layer. One additive examined in this study is sorbitol. With admixture of sorbitol to the precursor solution we observe a decrease of parasitic absorbed current density by the PEDOT:PSS of 50 % for a sorbitol content of 2.1 %, and a decrease of 80 % for a sorbitol content of 8.4 %. On large-area (15.6 × 15.6 cm2) PEDOT:PSS/c-Si solar cells with phosphorus-diffused front emitter and screen-printed metal contacts on the front side and full-area PEDOT:PSS-covered rear, we observe an increase of the Jsc value of 1.37 mA/cm2 for 8.4 % admixture of sorbitol to the precursor dispersion.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. Hrsg. / Rolf Brendel; Jef Poortmans; Arthur Weeber; Giso Hahn; Christophe Ballif; Stefan Glunz; Pierre-Jean Ribeyron. American Institute of Physics Inc., 2018. 040008 (AIP Conference Proceedings; Band 1999).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Reduction of parasitic absorption in PEDOT
T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
AU - Halbich, Marc Uwe
AU - Zielke, Dimitri
AU - Gogolin, Ralf
AU - Sauer, Rüdiger
AU - Lövenich, Wilfried
AU - Schmidt, Jan
N1 - Funding Information: This work financially supported by the German State of Lower Saxony and the German Federal Ministry of Economics and Energy within the research project “SiPoly” under contract number 0325884A.
PY - 2018/8/10
Y1 - 2018/8/10
N2 - The hole-conducting polymer PEDOT:PSS is known to effectively passivate crystalline silicon (c-Si) surfaces and at the same time provide a low contact resistance for holes. PEDOT:PSS can hence be used as a hole-selective contact layer at the rear side of a silicon solar cell. We investigate the influence of the transparency and thickness of the PEDOT: PSS layer on the parasitic infrared absorption in the PEDOT:PSS layer on the rear of a silicon solar cell. We find that a decrease of PEDOT:PSS layer thickness reduces the parasitic absorption in the PEDOT:PSS layer. Reflectance measurements show an increase of escape reflection in the long-wavelengths range for decreasing PEDOT:PSS layer thicknesses. On solar cells with an active area of 4 cm2, we observe an increase of the short-circuit current density Jsc of (0.6 ± 0.3) mA/cm2, from (37.7 ± 0.1) mA/cm2 to (38.3 ± 0.2) mA/cm2, by decreasing the PEDOT:PSS layer thickness from (301 ± 23) nm to (67 ± 8) nm. In addition, we show that additives that increase the transparency of the PEDOT:PSS layer can be used for effectively reducing the parasitic infrared absorption in the PEDOT:PSS layer. One additive examined in this study is sorbitol. With admixture of sorbitol to the precursor solution we observe a decrease of parasitic absorbed current density by the PEDOT:PSS of 50 % for a sorbitol content of 2.1 %, and a decrease of 80 % for a sorbitol content of 8.4 %. On large-area (15.6 × 15.6 cm2) PEDOT:PSS/c-Si solar cells with phosphorus-diffused front emitter and screen-printed metal contacts on the front side and full-area PEDOT:PSS-covered rear, we observe an increase of the Jsc value of 1.37 mA/cm2 for 8.4 % admixture of sorbitol to the precursor dispersion.
AB - The hole-conducting polymer PEDOT:PSS is known to effectively passivate crystalline silicon (c-Si) surfaces and at the same time provide a low contact resistance for holes. PEDOT:PSS can hence be used as a hole-selective contact layer at the rear side of a silicon solar cell. We investigate the influence of the transparency and thickness of the PEDOT: PSS layer on the parasitic infrared absorption in the PEDOT:PSS layer on the rear of a silicon solar cell. We find that a decrease of PEDOT:PSS layer thickness reduces the parasitic absorption in the PEDOT:PSS layer. Reflectance measurements show an increase of escape reflection in the long-wavelengths range for decreasing PEDOT:PSS layer thicknesses. On solar cells with an active area of 4 cm2, we observe an increase of the short-circuit current density Jsc of (0.6 ± 0.3) mA/cm2, from (37.7 ± 0.1) mA/cm2 to (38.3 ± 0.2) mA/cm2, by decreasing the PEDOT:PSS layer thickness from (301 ± 23) nm to (67 ± 8) nm. In addition, we show that additives that increase the transparency of the PEDOT:PSS layer can be used for effectively reducing the parasitic infrared absorption in the PEDOT:PSS layer. One additive examined in this study is sorbitol. With admixture of sorbitol to the precursor solution we observe a decrease of parasitic absorbed current density by the PEDOT:PSS of 50 % for a sorbitol content of 2.1 %, and a decrease of 80 % for a sorbitol content of 8.4 %. On large-area (15.6 × 15.6 cm2) PEDOT:PSS/c-Si solar cells with phosphorus-diffused front emitter and screen-printed metal contacts on the front side and full-area PEDOT:PSS-covered rear, we observe an increase of the Jsc value of 1.37 mA/cm2 for 8.4 % admixture of sorbitol to the precursor dispersion.
UR - http://www.scopus.com/inward/record.url?scp=85051967122&partnerID=8YFLogxK
U2 - 10.1063/1.5049271
DO - 10.1063/1.5049271
M3 - Conference contribution
AN - SCOPUS:85051967122
SN - 9780735417151
T3 - AIP Conference Proceedings
BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Poortmans, Jef
A2 - Weeber, Arthur
A2 - Hahn, Giso
A2 - Ballif, Christophe
A2 - Glunz, Stefan
A2 - Ribeyron, Pierre-Jean
PB - American Institute of Physics Inc.
Y2 - 19 March 2018 through 21 March 2018
ER -