Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • H. P. Zeindl
  • G. Lippert
  • J. Drews
  • R. Kurps
  • H. J. Osten

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksGettering and Defect Engineering in Semiconductor Technology, GADEST 93
Herausgeber/-innenH.G. Grimmeiss, M. Kittler, H. Richter
Seiten117-122
Seitenumfang6
PublikationsstatusVeröffentlicht - Dez. 1993
Extern publiziertJa
Veranstaltung5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 - Chossewitz, Frankfurt (Oder), Deutschland
Dauer: 9 Okt. 1993 → 14 Okt. 1993

Publikationsreihe

NameSolid State Phenomena
Band32-33
ISSN (Print)1012-0394
ISSN (elektronisch)1662-9779

Abstract

In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.

ASJC Scopus Sachgebiete

Zitieren

Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. / Zeindl, H. P.; Lippert, G.; Drews, J. et al.
Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Hrsg. / H.G. Grimmeiss; M. Kittler; H. Richter. 1993. S. 117-122 (Solid State Phenomena; Band 32-33).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Zeindl, HP, Lippert, G, Drews, J, Kurps, R & Osten, HJ 1993, Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. in HG Grimmeiss, M Kittler & H Richter (Hrsg.), Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Solid State Phenomena, Bd. 32-33, S. 117-122, 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993, Chossewitz, Frankfurt (Oder), Deutschland, 9 Okt. 1993. https://doi.org/10.4028/www.scientific.net/SSP.32-33.117
Zeindl, H. P., Lippert, G., Drews, J., Kurps, R., & Osten, H. J. (1993). Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. In H. G. Grimmeiss, M. Kittler, & H. Richter (Hrsg.), Gettering and Defect Engineering in Semiconductor Technology, GADEST 93 (S. 117-122). (Solid State Phenomena; Band 32-33). https://doi.org/10.4028/www.scientific.net/SSP.32-33.117
Zeindl HP, Lippert G, Drews J, Kurps R, Osten HJ. Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. in Grimmeiss HG, Kittler M, Richter H, Hrsg., Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. 1993. S. 117-122. (Solid State Phenomena). doi: 10.4028/www.scientific.net/SSP.32-33.117
Zeindl, H. P. ; Lippert, G. ; Drews, J. et al. / Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Hrsg. / H.G. Grimmeiss ; M. Kittler ; H. Richter. 1993. S. 117-122 (Solid State Phenomena).
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@inproceedings{a0a0c2162b704a188fbd00aea5f2b174,
title = "Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE",
abstract = "In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.",
author = "Zeindl, {H. P.} and G. Lippert and J. Drews and R. Kurps and Osten, {H. J.}",
year = "1993",
month = dec,
doi = "10.4028/www.scientific.net/SSP.32-33.117",
language = "English",
isbn = "9783908450009",
series = "Solid State Phenomena",
pages = "117--122",
editor = "H.G. Grimmeiss and M. Kittler and H. Richter",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology, GADEST 93",
note = "5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 ; Conference date: 09-10-1993 Through 14-10-1993",

}

Download

TY - GEN

T1 - Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE

AU - Zeindl, H. P.

AU - Lippert, G.

AU - Drews, J.

AU - Kurps, R.

AU - Osten, H. J.

PY - 1993/12

Y1 - 1993/12

N2 - In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.

AB - In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.

UR - http://www.scopus.com/inward/record.url?scp=84955113887&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.32-33.117

DO - 10.4028/www.scientific.net/SSP.32-33.117

M3 - Conference contribution

AN - SCOPUS:84955113887

SN - 9783908450009

T3 - Solid State Phenomena

SP - 117

EP - 122

BT - Gettering and Defect Engineering in Semiconductor Technology, GADEST 93

A2 - Grimmeiss, H.G.

A2 - Kittler, M.

A2 - Richter, H.

T2 - 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993

Y2 - 9 October 1993 through 14 October 1993

ER -