Reduction of droplet emission in random arc technology

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

Externe Organisationen

  • Technische Universität Dortmund
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)65-74
Seitenumfang10
FachzeitschriftSurface and Coatings Technology
Jahrgang46
Ausgabenummer1
PublikationsstatusVeröffentlicht - 30 Mai 1991
Extern publiziertJa

Abstract

The influence of a static magnetic field (0-10 mT at the emission plane of the cathode) in random arc reactive physical vapour deposition (PVD) (TiN, CrN) and non-reactive PVD (titanium, chromium, copper, nickel) has been investigated using various cathode designs. The dominant effect of an increased magnetic field was a more confined arc trace. In non-reactive processes, detrimental selective cathode erosion was observed. In reactive processes, improved nitriding resulted. A distinct reduction in droplet emission was achieved only with a high melting nitride layer (TiN). Cathode design may assist in droplet reduction by further confinement of the arc trace. In all reactive processes, changes in layer microstructure were detected indicating a decrease in ion energy with increasing magnetic field. Surface roughness values comparable with those obtained in steered arc PVD can be achieved, using strong static magnetic fields combined with modified cathode design, if the process is run at a stabilized steady state nitrogen pressure of about 1 Pa from its very start.

ASJC Scopus Sachgebiete

Zitieren

Reduction of droplet emission in random arc technology. / Steffens, H. D.; Mack, M.; Moehwald, K. et al.
in: Surface and Coatings Technology, Jahrgang 46, Nr. 1, 30.05.1991, S. 65-74.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Steffens HD, Mack M, Moehwald K, Reichel K. Reduction of droplet emission in random arc technology. Surface and Coatings Technology. 1991 Mai 30;46(1):65-74. doi: 10.1016/0257-8972(91)90150-U
Steffens, H. D. ; Mack, M. ; Moehwald, K. et al. / Reduction of droplet emission in random arc technology. in: Surface and Coatings Technology. 1991 ; Jahrgang 46, Nr. 1. S. 65-74.
Download
@article{87811575ce3c4f44b7eb664921e6263a,
title = "Reduction of droplet emission in random arc technology",
abstract = "The influence of a static magnetic field (0-10 mT at the emission plane of the cathode) in random arc reactive physical vapour deposition (PVD) (TiN, CrN) and non-reactive PVD (titanium, chromium, copper, nickel) has been investigated using various cathode designs. The dominant effect of an increased magnetic field was a more confined arc trace. In non-reactive processes, detrimental selective cathode erosion was observed. In reactive processes, improved nitriding resulted. A distinct reduction in droplet emission was achieved only with a high melting nitride layer (TiN). Cathode design may assist in droplet reduction by further confinement of the arc trace. In all reactive processes, changes in layer microstructure were detected indicating a decrease in ion energy with increasing magnetic field. Surface roughness values comparable with those obtained in steered arc PVD can be achieved, using strong static magnetic fields combined with modified cathode design, if the process is run at a stabilized steady state nitrogen pressure of about 1 Pa from its very start.",
author = "Steffens, {H. D.} and M. Mack and K. Moehwald and K. Reichel",
year = "1991",
month = may,
day = "30",
doi = "10.1016/0257-8972(91)90150-U",
language = "English",
volume = "46",
pages = "65--74",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "1",

}

Download

TY - JOUR

T1 - Reduction of droplet emission in random arc technology

AU - Steffens, H. D.

AU - Mack, M.

AU - Moehwald, K.

AU - Reichel, K.

PY - 1991/5/30

Y1 - 1991/5/30

N2 - The influence of a static magnetic field (0-10 mT at the emission plane of the cathode) in random arc reactive physical vapour deposition (PVD) (TiN, CrN) and non-reactive PVD (titanium, chromium, copper, nickel) has been investigated using various cathode designs. The dominant effect of an increased magnetic field was a more confined arc trace. In non-reactive processes, detrimental selective cathode erosion was observed. In reactive processes, improved nitriding resulted. A distinct reduction in droplet emission was achieved only with a high melting nitride layer (TiN). Cathode design may assist in droplet reduction by further confinement of the arc trace. In all reactive processes, changes in layer microstructure were detected indicating a decrease in ion energy with increasing magnetic field. Surface roughness values comparable with those obtained in steered arc PVD can be achieved, using strong static magnetic fields combined with modified cathode design, if the process is run at a stabilized steady state nitrogen pressure of about 1 Pa from its very start.

AB - The influence of a static magnetic field (0-10 mT at the emission plane of the cathode) in random arc reactive physical vapour deposition (PVD) (TiN, CrN) and non-reactive PVD (titanium, chromium, copper, nickel) has been investigated using various cathode designs. The dominant effect of an increased magnetic field was a more confined arc trace. In non-reactive processes, detrimental selective cathode erosion was observed. In reactive processes, improved nitriding resulted. A distinct reduction in droplet emission was achieved only with a high melting nitride layer (TiN). Cathode design may assist in droplet reduction by further confinement of the arc trace. In all reactive processes, changes in layer microstructure were detected indicating a decrease in ion energy with increasing magnetic field. Surface roughness values comparable with those obtained in steered arc PVD can be achieved, using strong static magnetic fields combined with modified cathode design, if the process is run at a stabilized steady state nitrogen pressure of about 1 Pa from its very start.

UR - http://www.scopus.com/inward/record.url?scp=0026156276&partnerID=8YFLogxK

U2 - 10.1016/0257-8972(91)90150-U

DO - 10.1016/0257-8972(91)90150-U

M3 - Article

AN - SCOPUS:0026156276

VL - 46

SP - 65

EP - 74

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1

ER -

Von denselben Autoren