Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • Robert Witteck
  • Henning Schulte-Huxel
  • Boris Veith-Wolf
  • Malte Ruben Vogt
  • Fabian Kiefer
  • Marc Köntges
  • Robby Peibst
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Titel des Sammelwerks2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten1366-1370
Seitenumfang5
ISBN (elektronisch)978-1-5090-5605-7
ISBN (Print)978-1-5090-5606-4
PublikationsstatusVeröffentlicht - 2017
Veranstaltung44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, USA / Vereinigte Staaten
Dauer: 25 Juni 2017 → 30 Juni 2017

Abstract

We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

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Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. / Witteck, Robert; Schulte-Huxel, Henning; Veith-Wolf, Boris et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. S. 1366-1370.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Witteck, R, Schulte-Huxel, H, Veith-Wolf, B, Vogt, MR, Kiefer, F, Köntges, M, Peibst, R & Brendel, R 2017, Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., S. 1366-1370, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, USA / Vereinigte Staaten, 25 Juni 2017. https://doi.org/10.1109/PVSC.2017.8366019
Witteck, R., Schulte-Huxel, H., Veith-Wolf, B., Vogt, M. R., Kiefer, F., Köntges, M., Peibst, R., & Brendel, R. (2017). Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (S. 1366-1370). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366019
Witteck R, Schulte-Huxel H, Veith-Wolf B, Vogt MR, Kiefer F, Köntges M et al. Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. S. 1366-1370 doi: 10.1109/PVSC.2017.8366019
Witteck, Robert ; Schulte-Huxel, Henning ; Veith-Wolf, Boris et al. / Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. S. 1366-1370
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title = "Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers",
abstract = "We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.",
keywords = "Aluminum oxide, Carrier lifetime, Crystalline silicon, Degradation, Silicon nitride, Surface passivation, UV stability",
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T1 - Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers

AU - Witteck, Robert

AU - Schulte-Huxel, Henning

AU - Veith-Wolf, Boris

AU - Vogt, Malte Ruben

AU - Kiefer, Fabian

AU - Köntges, Marc

AU - Peibst, Robby

AU - Brendel, Rolf

N1 - Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

AB - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

KW - Aluminum oxide

KW - Carrier lifetime

KW - Crystalline silicon

KW - Degradation

KW - Silicon nitride

KW - Surface passivation

KW - UV stability

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U2 - 10.1109/PVSC.2017.8366019

DO - 10.1109/PVSC.2017.8366019

M3 - Conference contribution

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SN - 978-1-5090-5606-4

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EP - 1370

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

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