Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 413-416 |
| Seitenumfang | 4 |
| Fachzeitschrift | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publikationsstatus | Veröffentlicht - 6 Aug. 2002 |
| Extern publiziert | Ja |
| Veranstaltung | 1996 25th IEEE Photovoltaic Specialists Conference - Washington, USA / Vereinigte Staaten Dauer: 13 Mai 1996 → 17 Mai 1996 |
Abstract
In this paper, the lowest ever reported effective surface recombination velocities Seff on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375°C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-Ωcm p-Si wafers, an extremely low Seff value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged Seff values as low as 135 cm/s.
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- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Conference Record of the IEEE Photovoltaic Specialists Conference, 06.08.2002, S. 413-416.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Record low surface recombination velocities on low-resistivity silicon solar cell substrates
AU - Schmidt, Jan
AU - Lauinger, Thomas
AU - Aberle, Armin G.
AU - Hezel, Rudolf
PY - 2002/8/6
Y1 - 2002/8/6
N2 - In this paper, the lowest ever reported effective surface recombination velocities Seff on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375°C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-Ωcm p-Si wafers, an extremely low Seff value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged Seff values as low as 135 cm/s.
AB - In this paper, the lowest ever reported effective surface recombination velocities Seff on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375°C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-Ωcm p-Si wafers, an extremely low Seff value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged Seff values as low as 135 cm/s.
UR - http://www.scopus.com/inward/record.url?scp=0030393529&partnerID=8YFLogxK
U2 - 10.1109/pvsc.1996.564031
DO - 10.1109/pvsc.1996.564031
M3 - Conference article
AN - SCOPUS:0030393529
SP - 413
EP - 416
JO - Conference Record of the IEEE Photovoltaic Specialists Conference
JF - Conference Record of the IEEE Photovoltaic Specialists Conference
SN - 0160-8371
T2 - 1996 25th IEEE Photovoltaic Specialists Conference
Y2 - 13 May 1996 through 17 May 1996
ER -