Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 412-418 |
| Seitenumfang | 7 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 92 |
| Publikationsstatus | Veröffentlicht - 1 Aug. 2016 |
| Veranstaltung | 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, Frankreich Dauer: 7 März 2016 → 9 März 2016 |
Abstract
We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities - n+ doped BSF and p+ doped emitter. The recombination behavior is investigated at two different processing stages: before and after trench separation of p+ and n+ regions within polysilicon (poly-Si). Before trench separation, we find a systematic dependence of the recombination behavior on the BSF index, i.e. the p+n+-junction meander length in the poly-Si. Obviously, recombination at the p+n+-junction in the poly-Si limits the implied open circuit voltage Voc,impl. at one sun illumination and the implied pseudo fill factor pFFimpl. to 695 mV and 80%, respectively. After trench isolation, however, Voc,impl (pFFimpl.) values increase up to 730 mV (85.5%), corresponding to a pseudo-efficiency of 26.2% for an assumed short circuit current density Jsc of 42 mA/cm2. We demonstrate a photolithography-free back junction back contacted solar cell with p-type and n-type POLO junctions with an in-house measured champion efficiency of 23.9% on a designated area of 3.97 cm2. This efficiency is mainly limited by the imperfect passivation in the undoped trench regions and at the undoped front side.
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in: Energy Procedia, Jahrgang 92, 01.08.2016, S. 412-418.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities
AU - Rienäcker, Michael
AU - Merkle, Agnes
AU - Römer, Udo
AU - Kohlenberg, Heike
AU - Krügener, Jan
AU - Brendel, Rolf
AU - Peibst, Robby
PY - 2016/8/1
Y1 - 2016/8/1
N2 - We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities - n+ doped BSF and p+ doped emitter. The recombination behavior is investigated at two different processing stages: before and after trench separation of p+ and n+ regions within polysilicon (poly-Si). Before trench separation, we find a systematic dependence of the recombination behavior on the BSF index, i.e. the p+n+-junction meander length in the poly-Si. Obviously, recombination at the p+n+-junction in the poly-Si limits the implied open circuit voltage Voc,impl. at one sun illumination and the implied pseudo fill factor pFFimpl. to 695 mV and 80%, respectively. After trench isolation, however, Voc,impl (pFFimpl.) values increase up to 730 mV (85.5%), corresponding to a pseudo-efficiency of 26.2% for an assumed short circuit current density Jsc of 42 mA/cm2. We demonstrate a photolithography-free back junction back contacted solar cell with p-type and n-type POLO junctions with an in-house measured champion efficiency of 23.9% on a designated area of 3.97 cm2. This efficiency is mainly limited by the imperfect passivation in the undoped trench regions and at the undoped front side.
AB - We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities - n+ doped BSF and p+ doped emitter. The recombination behavior is investigated at two different processing stages: before and after trench separation of p+ and n+ regions within polysilicon (poly-Si). Before trench separation, we find a systematic dependence of the recombination behavior on the BSF index, i.e. the p+n+-junction meander length in the poly-Si. Obviously, recombination at the p+n+-junction in the poly-Si limits the implied open circuit voltage Voc,impl. at one sun illumination and the implied pseudo fill factor pFFimpl. to 695 mV and 80%, respectively. After trench isolation, however, Voc,impl (pFFimpl.) values increase up to 730 mV (85.5%), corresponding to a pseudo-efficiency of 26.2% for an assumed short circuit current density Jsc of 42 mA/cm2. We demonstrate a photolithography-free back junction back contacted solar cell with p-type and n-type POLO junctions with an in-house measured champion efficiency of 23.9% on a designated area of 3.97 cm2. This efficiency is mainly limited by the imperfect passivation in the undoped trench regions and at the undoped front side.
KW - back junction back contact solar cell
KW - pn junction
KW - POLO
KW - polysilicon on oxide junctions
KW - recombination
KW - trench isolation
UR - http://www.scopus.com/inward/record.url?scp=85014435647&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2016.07.121
DO - 10.1016/j.egypro.2016.07.121
M3 - Conference article
AN - SCOPUS:85014435647
VL - 92
SP - 412
EP - 418
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016
Y2 - 7 March 2016 through 9 March 2016
ER -