Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 337-342 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 8 |
| Frühes Online-Datum | 12 Aug. 2011 |
| Publikationsstatus | Veröffentlicht - 2011 |
Abstract
The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the recombination properties and formation of base contacts, which are realized by local laser ablation of a dielectric stack (laser contact opening - LCO) and subsequent full area screen printing of Al paste. Based on charge carrier lifetime measurements using the camera-based and calibration-free dynamic infrared lifetime mapping (ILM) technique, we determine contact recombination velocities at the contacts as low as Scont = 65 cm/s on 200 Ωcm float-zone silicon (FZ-Si) and corresponding reverse saturation current densities of J0,cont = 900 fA/cm2 on 1.5 Ωcm FZ-Si. As a result we show that local contact geometries with point contact radii r > 100 μm and line contact widths a > 80 μm are appropriate for lowest contact recombination employing local Al alloyed contacts. Furthermore, complete and high quality laser ablation of the dielectric stack is necessary for the formation of a sufficiently thick LBSF.
ASJC Scopus Sachgebiete
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Energy Procedia, Jahrgang 8, 2011, S. 337-342.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping
AU - Müller, Jens
AU - Bothe, Karsten
AU - Gatz, Sebastian
AU - Plagwitz, Heiko
AU - Schubert, Gunnar
AU - Brendel, Rolf
PY - 2011
Y1 - 2011
N2 - The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the recombination properties and formation of base contacts, which are realized by local laser ablation of a dielectric stack (laser contact opening - LCO) and subsequent full area screen printing of Al paste. Based on charge carrier lifetime measurements using the camera-based and calibration-free dynamic infrared lifetime mapping (ILM) technique, we determine contact recombination velocities at the contacts as low as Scont = 65 cm/s on 200 Ωcm float-zone silicon (FZ-Si) and corresponding reverse saturation current densities of J0,cont = 900 fA/cm2 on 1.5 Ωcm FZ-Si. As a result we show that local contact geometries with point contact radii r > 100 μm and line contact widths a > 80 μm are appropriate for lowest contact recombination employing local Al alloyed contacts. Furthermore, complete and high quality laser ablation of the dielectric stack is necessary for the formation of a sufficiently thick LBSF.
AB - The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the recombination properties and formation of base contacts, which are realized by local laser ablation of a dielectric stack (laser contact opening - LCO) and subsequent full area screen printing of Al paste. Based on charge carrier lifetime measurements using the camera-based and calibration-free dynamic infrared lifetime mapping (ILM) technique, we determine contact recombination velocities at the contacts as low as Scont = 65 cm/s on 200 Ωcm float-zone silicon (FZ-Si) and corresponding reverse saturation current densities of J0,cont = 900 fA/cm2 on 1.5 Ωcm FZ-Si. As a result we show that local contact geometries with point contact radii r > 100 μm and line contact widths a > 80 μm are appropriate for lowest contact recombination employing local Al alloyed contacts. Furthermore, complete and high quality laser ablation of the dielectric stack is necessary for the formation of a sufficiently thick LBSF.
KW - Carrier lifetime
KW - Laser ablation
KW - Local back surface field
KW - Silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=80052103778&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.146
DO - 10.1016/j.egypro.2011.06.146
M3 - Article
AN - SCOPUS:80052103778
VL - 8
SP - 337
EP - 342
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -