Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 123701 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 102 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 17 Dez. 2007 |
| Extern publiziert | Ja |
Abstract
The recombination activity of interstitial chromium (Cri) and pairs of interstitial chromium and substitutional boron (Cri Bs) in crystalline silicon is studied by combining temperature- and injection-dependent lifetime and deep-level transient spectroscopy measurements on intentionally chromium-contaminated n - and p -type silicon wafers. Cri as well as Cri Bs pairs are found to be one order of magnitude less recombination active than widely assumed. In the case of Cri, a defect energy level of EC - Et =0.24 eV, an electron capture cross section of n =2× 10-14 cm2, and a hole capture cross section of p =4× 10-15 cm2 are determined. For Cri Bs pairs, measurements on boron-doped p -type silicon result in Et - EV =0.28 eV, n =5× 10-15 cm2, and p =1× 10-14 cm2. Theoretical calculations using the Shockley-Read-Hall theory show that it depends crucially on the doping concentration whether Cri or Cri Bs is the more active recombination center. Using a calibration function calculated from the defect parameters determined in this study, lifetime changes measured before and after thermal dissociation of Cri Bs pairs can be used to determine the interstitial chromium concentration in boron-doped silicon.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 102, Nr. 12, 123701, 17.12.2007.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Recombination activity of interstitial chromium and chromium-boron pairs in silicon
AU - Schmidt, Jan
AU - Krain, Rafael
AU - Bothe, Karsten
AU - Pensl, Gerhard
AU - Beljakowa, Svetlana
PY - 2007/12/17
Y1 - 2007/12/17
N2 - The recombination activity of interstitial chromium (Cri) and pairs of interstitial chromium and substitutional boron (Cri Bs) in crystalline silicon is studied by combining temperature- and injection-dependent lifetime and deep-level transient spectroscopy measurements on intentionally chromium-contaminated n - and p -type silicon wafers. Cri as well as Cri Bs pairs are found to be one order of magnitude less recombination active than widely assumed. In the case of Cri, a defect energy level of EC - Et =0.24 eV, an electron capture cross section of n =2× 10-14 cm2, and a hole capture cross section of p =4× 10-15 cm2 are determined. For Cri Bs pairs, measurements on boron-doped p -type silicon result in Et - EV =0.28 eV, n =5× 10-15 cm2, and p =1× 10-14 cm2. Theoretical calculations using the Shockley-Read-Hall theory show that it depends crucially on the doping concentration whether Cri or Cri Bs is the more active recombination center. Using a calibration function calculated from the defect parameters determined in this study, lifetime changes measured before and after thermal dissociation of Cri Bs pairs can be used to determine the interstitial chromium concentration in boron-doped silicon.
AB - The recombination activity of interstitial chromium (Cri) and pairs of interstitial chromium and substitutional boron (Cri Bs) in crystalline silicon is studied by combining temperature- and injection-dependent lifetime and deep-level transient spectroscopy measurements on intentionally chromium-contaminated n - and p -type silicon wafers. Cri as well as Cri Bs pairs are found to be one order of magnitude less recombination active than widely assumed. In the case of Cri, a defect energy level of EC - Et =0.24 eV, an electron capture cross section of n =2× 10-14 cm2, and a hole capture cross section of p =4× 10-15 cm2 are determined. For Cri Bs pairs, measurements on boron-doped p -type silicon result in Et - EV =0.28 eV, n =5× 10-15 cm2, and p =1× 10-14 cm2. Theoretical calculations using the Shockley-Read-Hall theory show that it depends crucially on the doping concentration whether Cri or Cri Bs is the more active recombination center. Using a calibration function calculated from the defect parameters determined in this study, lifetime changes measured before and after thermal dissociation of Cri Bs pairs can be used to determine the interstitial chromium concentration in boron-doped silicon.
UR - http://www.scopus.com/inward/record.url?scp=37549058378&partnerID=8YFLogxK
U2 - 10.1063/1.2822452
DO - 10.1063/1.2822452
M3 - Article
AN - SCOPUS:37549058378
VL - 102
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 12
M1 - 123701
ER -