Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 194-199 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 186 |
| Frühes Online-Datum | 30 Juni 2018 |
| Publikationsstatus | Veröffentlicht - Nov. 2018 |
Abstract
Unusually high carrier lifetimes are measured by photoconductance decay on n-type Czochralski-grown silicon wafers of different doping concentrations, passivated using plasma-assisted atomic-layer-deposited aluminum oxide (Al2O3) on both wafer surfaces. The measured effective lifetimes significantly exceed the intrinsic lifetime limit previously reported in the literature. Several prerequisites have to be fulfilled to allow the measurement of such high lifetimes on Al2O3-passivated n-type silicon wafers: (i) large-area wafers are required to minimize the impact of edge recombination via the Al2O3-charge-induced inversion layer, (ii) an exceptionally homogeneous Al2O3 surface passivation is required, and (iii) very thick silicon wafers are needed. Based on our lifetime measurements on n-type silicon wafers of different doping concentrations, we introduce a new parameterization of the intrinsic lifetime for n-type crystalline silicon. This new parameterization has implications concerning the maximum reachable efficiency of n-type silicon solar cells, which is larger than assumed before.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Solar Energy Materials and Solar Cells, Jahrgang 186, 11.2018, S. 194-199.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Reassessment of intrinsic lifetime limit in n-type crystalline silicon and implication on maximum solar cell efficiency
AU - Veith-Wolf, Boris A.
AU - Schäfer, Sören
AU - Brendel, Rolf
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2018 Elsevier B.V. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/11
Y1 - 2018/11
N2 - Unusually high carrier lifetimes are measured by photoconductance decay on n-type Czochralski-grown silicon wafers of different doping concentrations, passivated using plasma-assisted atomic-layer-deposited aluminum oxide (Al2O3) on both wafer surfaces. The measured effective lifetimes significantly exceed the intrinsic lifetime limit previously reported in the literature. Several prerequisites have to be fulfilled to allow the measurement of such high lifetimes on Al2O3-passivated n-type silicon wafers: (i) large-area wafers are required to minimize the impact of edge recombination via the Al2O3-charge-induced inversion layer, (ii) an exceptionally homogeneous Al2O3 surface passivation is required, and (iii) very thick silicon wafers are needed. Based on our lifetime measurements on n-type silicon wafers of different doping concentrations, we introduce a new parameterization of the intrinsic lifetime for n-type crystalline silicon. This new parameterization has implications concerning the maximum reachable efficiency of n-type silicon solar cells, which is larger than assumed before.
AB - Unusually high carrier lifetimes are measured by photoconductance decay on n-type Czochralski-grown silicon wafers of different doping concentrations, passivated using plasma-assisted atomic-layer-deposited aluminum oxide (Al2O3) on both wafer surfaces. The measured effective lifetimes significantly exceed the intrinsic lifetime limit previously reported in the literature. Several prerequisites have to be fulfilled to allow the measurement of such high lifetimes on Al2O3-passivated n-type silicon wafers: (i) large-area wafers are required to minimize the impact of edge recombination via the Al2O3-charge-induced inversion layer, (ii) an exceptionally homogeneous Al2O3 surface passivation is required, and (iii) very thick silicon wafers are needed. Based on our lifetime measurements on n-type silicon wafers of different doping concentrations, we introduce a new parameterization of the intrinsic lifetime for n-type crystalline silicon. This new parameterization has implications concerning the maximum reachable efficiency of n-type silicon solar cells, which is larger than assumed before.
KW - Aluminum oxide
KW - Auger recombination
KW - Charge carrier lifetime
KW - Intrinsic lifetime
KW - Silicon
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=85049304320&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2018.06.029
DO - 10.1016/j.solmat.2018.06.029
M3 - Article
AN - SCOPUS:85049304320
VL - 186
SP - 194
EP - 199
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -