Loading [MathJax]/extensions/tex2jax.js

Realization of an in-plane-gate single-electron transistor

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • H. Pothier
  • J. Weis
  • R. J. Haug
  • K. V. Klitzing

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Paul-Drude-Institut für Festkörperelektronik (PDI)
Plum Print visual indicator of research metrics
  • Citations
    • Citation Indexes: 17
  • Captures
    • Readers: 5
see details

Details

OriginalspracheEnglisch
Seiten (von - bis)3174-3176
Seitenumfang3
FachzeitschriftApplied physics letters
Jahrgang62
Ausgabenummer24
PublikationsstatusVeröffentlicht - 1 Dez. 1993
Extern publiziertJa

Abstract

By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.

ASJC Scopus Sachgebiete

Zitieren

Realization of an in-plane-gate single-electron transistor. / Pothier, H.; Weis, J.; Haug, R. J. et al.
in: Applied physics letters, Jahrgang 62, Nr. 24, 01.12.1993, S. 3174-3176.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Pothier, H, Weis, J, Haug, RJ, Klitzing, KV & Ploog, K 1993, 'Realization of an in-plane-gate single-electron transistor', Applied physics letters, Jg. 62, Nr. 24, S. 3174-3176. https://doi.org/10.1063/1.109120
Pothier, H., Weis, J., Haug, R. J., Klitzing, K. V., & Ploog, K. (1993). Realization of an in-plane-gate single-electron transistor. Applied physics letters, 62(24), 3174-3176. https://doi.org/10.1063/1.109120
Pothier H, Weis J, Haug RJ, Klitzing KV, Ploog K. Realization of an in-plane-gate single-electron transistor. Applied physics letters. 1993 Dez 1;62(24):3174-3176. doi: 10.1063/1.109120
Pothier, H. ; Weis, J. ; Haug, R. J. et al. / Realization of an in-plane-gate single-electron transistor. in: Applied physics letters. 1993 ; Jahrgang 62, Nr. 24. S. 3174-3176.
Download
@article{376a541855d44da5a7b5006b59fc6183,
title = "Realization of an in-plane-gate single-electron transistor",
abstract = "By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.",
author = "H. Pothier and J. Weis and Haug, {R. J.} and Klitzing, {K. V.} and K. Ploog",
year = "1993",
month = dec,
day = "1",
doi = "10.1063/1.109120",
language = "English",
volume = "62",
pages = "3174--3176",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "24",

}

Download

TY - JOUR

T1 - Realization of an in-plane-gate single-electron transistor

AU - Pothier, H.

AU - Weis, J.

AU - Haug, R. J.

AU - Klitzing, K. V.

AU - Ploog, K.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.

AB - By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.

UR - http://www.scopus.com/inward/record.url?scp=0009383654&partnerID=8YFLogxK

U2 - 10.1063/1.109120

DO - 10.1063/1.109120

M3 - Article

AN - SCOPUS:0009383654

VL - 62

SP - 3174

EP - 3176

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 24

ER -

Von denselben Autoren