Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1510-1514 |
| Seitenumfang | 5 |
| Fachzeitschrift | Analytical chemistry |
| Jahrgang | 94 |
| Ausgabenummer | 3 |
| Frühes Online-Datum | 7 Jan. 2022 |
| Publikationsstatus | Veröffentlicht - 25 Jan. 2022 |
Abstract
The Fermi energy is known to be dependent on doping and temperature, but finding its value and corresponding thermal Fermi shift experimentally is not only difficult but is virtually impossible if one attempts their simultaneous determination. We report that temperature dependent Raman spectromicroscopy solves the purpose easily and proves to be a powerful technique to determine the position and temperature associated Fermi shift in an extrinsic semiconductor as demonstrated for silicon in the present study. The typical asymmetrically broadened Raman spectral line-shape from sufficiently doped n- and p-type silicon contains the information about the Fermi level position through its known association with the Fano coupling strength. Thus, Raman line-shape parameters, the terms quantify the Fano-coupling, have been used as experimental observables to reveal the value of the Fermi energy and consequent thermal Fermi shift. A simple formula has been developed based on existing established theoretical frameworks that can be used to calculate the position of the Fermi level. The proposed Raman spectroscopy-based formulation applies well for n- and p-type silicon. The calculated Fermi level position and its temperature dependent variation are consistent with the existing reports.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Analytische Chemie
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in: Analytical chemistry, Jahrgang 94, Nr. 3, 25.01.2022, S. 1510-1514.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Raman Spectroscopy as a Simple yet Effective Analytical Tool for Determining Fermi Energy and Temperature Dependent Fermi Shift in Silicon
AU - Rani, Chanchal
AU - Tanwar, Manushree
AU - Ghosh, Tanushree
AU - Kandpal, Suchita
AU - Pathak, Devesh K.
AU - Chaudhary, Anjali
AU - Yogi, Priyanka
AU - Saxena, Shailendra K.
AU - Kumar, Rajesh
N1 - Funding Information: The authors thank all of the COVID-19 warriors worldwide. The authors thank Professor N. K. Jain (Director, IIT Indore) for support. The authors acknowledges financial support from the Science and Engineering Research Board, Govt. of India (Grant No. CRG/2019/000371). The authors are thankful to IIT Indore for providing the SIC facility and Er. Nitin Upadhyay & Love Bansal for technical support. The authors T.G. and M.T. acknowledge IIT Indore and DST (File DST/INSPIRE/03/2018/000910/IF180398), the Government of India, for providing fellowships. The author C.R. acknowledges DST (DST/INSPIRE/03/2019/002160/IF190314), and the author S.K. acknowledges UGC (Reference 1304-JUNE-2018-513215), the Government of India, for providing fellowships. The facilities received from the Department of Science and Technology (DST), Government of India, under the FIST scheme (Grant Number SR/FST/PSI-225/2016) are highly acknowledged. Useful discussions with Professor V. D. Vankar, Professor A. K. Shukla and Professor M. R. Shenoy (IIT Delhi) are highly acknowledged.
PY - 2022/1/25
Y1 - 2022/1/25
N2 - The Fermi energy is known to be dependent on doping and temperature, but finding its value and corresponding thermal Fermi shift experimentally is not only difficult but is virtually impossible if one attempts their simultaneous determination. We report that temperature dependent Raman spectromicroscopy solves the purpose easily and proves to be a powerful technique to determine the position and temperature associated Fermi shift in an extrinsic semiconductor as demonstrated for silicon in the present study. The typical asymmetrically broadened Raman spectral line-shape from sufficiently doped n- and p-type silicon contains the information about the Fermi level position through its known association with the Fano coupling strength. Thus, Raman line-shape parameters, the terms quantify the Fano-coupling, have been used as experimental observables to reveal the value of the Fermi energy and consequent thermal Fermi shift. A simple formula has been developed based on existing established theoretical frameworks that can be used to calculate the position of the Fermi level. The proposed Raman spectroscopy-based formulation applies well for n- and p-type silicon. The calculated Fermi level position and its temperature dependent variation are consistent with the existing reports.
AB - The Fermi energy is known to be dependent on doping and temperature, but finding its value and corresponding thermal Fermi shift experimentally is not only difficult but is virtually impossible if one attempts their simultaneous determination. We report that temperature dependent Raman spectromicroscopy solves the purpose easily and proves to be a powerful technique to determine the position and temperature associated Fermi shift in an extrinsic semiconductor as demonstrated for silicon in the present study. The typical asymmetrically broadened Raman spectral line-shape from sufficiently doped n- and p-type silicon contains the information about the Fermi level position through its known association with the Fano coupling strength. Thus, Raman line-shape parameters, the terms quantify the Fano-coupling, have been used as experimental observables to reveal the value of the Fermi energy and consequent thermal Fermi shift. A simple formula has been developed based on existing established theoretical frameworks that can be used to calculate the position of the Fermi level. The proposed Raman spectroscopy-based formulation applies well for n- and p-type silicon. The calculated Fermi level position and its temperature dependent variation are consistent with the existing reports.
UR - http://www.scopus.com/inward/record.url?scp=85123284669&partnerID=8YFLogxK
U2 - 10.1021/acs.analchem.1c03624
DO - 10.1021/acs.analchem.1c03624
M3 - Article
AN - SCOPUS:85123284669
VL - 94
SP - 1510
EP - 1514
JO - Analytical chemistry
JF - Analytical chemistry
SN - 0003-2700
IS - 3
ER -