Quantum interference in an electron-hole graphene ring system

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OriginalspracheEnglisch
Titel des SammelwerksPhysics of Semiconductors
UntertitelProceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
Herausgeber/-innenThomas Ihn, Clemens Rössler, Aleksey Kozikov
Seiten141-142
Seitenumfang2
PublikationsstatusVeröffentlicht - 31 Dez. 2013
Veranstaltung31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Schweiz
Dauer: 29 Juli 20123 Aug. 2012

Publikationsreihe

NameAIP Conference Proceedings
Band1566
ISSN (Print)0094-243X
ISSN (elektronisch)1551-7616

Abstract

Quantum interference is observed in a graphene ring system via the Aharonov Bohm effect. As graphene is a gapless semiconductor, this geometry allows to study the unique situation of quantum interference between electrons and holes in addition to the unipolar quantum interference. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interference.

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Quantum interference in an electron-hole graphene ring system. / Smirnov, D.; Schmidt, H.; Haug, R. J.
Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. Hrsg. / Thomas Ihn; Clemens Rössler; Aleksey Kozikov. 2013. S. 141-142 (AIP Conference Proceedings; Band 1566).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Smirnov, D, Schmidt, H & Haug, RJ 2013, Quantum interference in an electron-hole graphene ring system. in T Ihn, C Rössler & A Kozikov (Hrsg.), Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. AIP Conference Proceedings, Bd. 1566, S. 141-142, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Schweiz, 29 Juli 2012. https://doi.org/10.1063/1.4848325, https://doi.org/10.15488/2807
Smirnov, D., Schmidt, H., & Haug, R. J. (2013). Quantum interference in an electron-hole graphene ring system. In T. Ihn, C. Rössler, & A. Kozikov (Hrsg.), Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (S. 141-142). (AIP Conference Proceedings; Band 1566). https://doi.org/10.1063/1.4848325, https://doi.org/10.15488/2807
Smirnov D, Schmidt H, Haug RJ. Quantum interference in an electron-hole graphene ring system. in Ihn T, Rössler C, Kozikov A, Hrsg., Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. S. 141-142. (AIP Conference Proceedings). doi: 10.1063/1.4848325, 10.15488/2807
Smirnov, D. ; Schmidt, H. ; Haug, R. J. / Quantum interference in an electron-hole graphene ring system. Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. Hrsg. / Thomas Ihn ; Clemens Rössler ; Aleksey Kozikov. 2013. S. 141-142 (AIP Conference Proceedings).
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@inproceedings{d48a9ef785ee407687604614df27cc31,
title = "Quantum interference in an electron-hole graphene ring system",
abstract = "Quantum interference is observed in a graphene ring system via the Aharonov Bohm effect. As graphene is a gapless semiconductor, this geometry allows to study the unique situation of quantum interference between electrons and holes in addition to the unipolar quantum interference. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interference.",
keywords = "Aharonov-Bohm effect, graphene, quantum interference phenomena, semiconductor materials",
author = "D. Smirnov and H. Schmidt and Haug, {R. J.}",
year = "2013",
month = dec,
day = "31",
doi = "10.1063/1.4848325",
language = "English",
isbn = "9780735411944",
series = "AIP Conference Proceedings",
pages = "141--142",
editor = "Thomas Ihn and Clemens R{\"o}ssler and Aleksey Kozikov",
booktitle = "Physics of Semiconductors",
note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",

}

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TY - GEN

T1 - Quantum interference in an electron-hole graphene ring system

AU - Smirnov, D.

AU - Schmidt, H.

AU - Haug, R. J.

PY - 2013/12/31

Y1 - 2013/12/31

N2 - Quantum interference is observed in a graphene ring system via the Aharonov Bohm effect. As graphene is a gapless semiconductor, this geometry allows to study the unique situation of quantum interference between electrons and holes in addition to the unipolar quantum interference. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interference.

AB - Quantum interference is observed in a graphene ring system via the Aharonov Bohm effect. As graphene is a gapless semiconductor, this geometry allows to study the unique situation of quantum interference between electrons and holes in addition to the unipolar quantum interference. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interference.

KW - Aharonov-Bohm effect

KW - graphene

KW - quantum interference phenomena

KW - semiconductor materials

UR - http://www.scopus.com/inward/record.url?scp=84907367201&partnerID=8YFLogxK

U2 - 10.1063/1.4848325

DO - 10.1063/1.4848325

M3 - Conference contribution

AN - SCOPUS:84907367201

SN - 9780735411944

T3 - AIP Conference Proceedings

SP - 141

EP - 142

BT - Physics of Semiconductors

A2 - Ihn, Thomas

A2 - Rössler, Clemens

A2 - Kozikov, Aleksey

T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012

Y2 - 29 July 2012 through 3 August 2012

ER -

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