Quantum dots formed in a GaAsAlGaAs quantum ring

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OriginalspracheEnglisch
Aufsatznummer013126
FachzeitschriftApplied physics letters
Jahrgang92
Ausgabenummer1
PublikationsstatusVeröffentlicht - 16 Jan. 2008

Abstract

We demonstrate the tunability of a GaAsAlGaAs quantum ring showing coherent Aharonov-Bohm oscillations up to a gate voltage regime where the ring splits into three quantum dots. This is explained based on the structure's special confinement potential. We characterized the dots by analyzing the corresponding sets of Coulomb blockade lines. Additionally, the spatial configuration of the dots was confirmed by charge measurements using an adjacent quantum point contact.

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Quantum dots formed in a GaAsAlGaAs quantum ring. / Mühle, A.; Wegscheider, W.; Haug, R. J.
in: Applied physics letters, Jahrgang 92, Nr. 1, 013126, 16.01.2008.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Mühle A, Wegscheider W, Haug RJ. Quantum dots formed in a GaAsAlGaAs quantum ring. Applied physics letters. 2008 Jan 16;92(1):013126. doi: 10.1063/1.2833694
Mühle, A. ; Wegscheider, W. ; Haug, R. J. / Quantum dots formed in a GaAsAlGaAs quantum ring. in: Applied physics letters. 2008 ; Jahrgang 92, Nr. 1.
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