Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Oleksiy B. Agafonov
  • Christian Dais
  • Detlev Grützmacher
  • Rolf J. Haug

Organisationseinheiten

Externe Organisationen

  • Paul Scherrer Institut (PSI)
  • Forschungszentrum Jülich
  • Jülich Aachen Research Alliance on Fundamentals of Future Information Technology (JARAFIT)
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Details

OriginalspracheEnglisch
Aufsatznummer222107
FachzeitschriftApplied physics letters
Jahrgang96
Ausgabenummer22
PublikationsstatusVeröffentlicht - 31 Mai 2010

Abstract

Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots.

ASJC Scopus Sachgebiete

Zitieren

Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots. / Agafonov, Oleksiy B.; Dais, Christian; Grützmacher, Detlev et al.
in: Applied physics letters, Jahrgang 96, Nr. 22, 222107, 31.05.2010.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Agafonov, Oleksiy B. ; Dais, Christian ; Grützmacher, Detlev et al. / Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots. in: Applied physics letters. 2010 ; Jahrgang 96, Nr. 22.
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