Quantized behavior of the LIDT in the fs-range in dielectric layers

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Marco Jupé
  • Lars Jensen
  • Kai Starke
  • Detlev Ristau
  • Andrius Melninkaitis
  • R. Grigonis
  • Valdas Sirutkaitis

Externe Organisationen

  • Laser Zentrum Hannover e.V. (LZH)
  • Vilnius University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksLaser-Induced Damage in Optical Materials: 2004
Untertitel36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado
ErscheinungsortBellingham
Herausgeber (Verlag)SPIE
Seiten53-60
Seitenumfang8
ISBN (Print)0-8194-5607-1
PublikationsstatusVeröffentlicht - 21 Feb. 2005
Extern publiziertJa
Veranstaltung36th Annual Boulder Damage Symposium : Laser-Induced Damage in Optical Materials: 2004 - Boulder, CO, USA / Vereinigte Staaten
Dauer: 20 Sept. 200422 Sept. 2004

Publikationsreihe

NameProceedings of SPIE - The International Society for Optical Engineering
Herausgeber (Verlag)SPIE
Band5647
ISSN (Print)0277-786X

Abstract

In comparison to studies at longer pulse regimes, investigations of laser induced damage threshold indicate a contrary behavior on the fs-scale for the dielectric coatings. In general, experiments reveal an electronic cause of the damage. The strong correlation of theoretical calculations with experimental data of laser induced damage thresholds for quartz verifies this assumption. Consequently, the characteristic function of the wavelength dependence of the damage threshold differs in this range from the classical behavior. The quantized structure of the electronic transition leads to a typical step function of the LIDT in dependence on the band gap energy of the materials. Hence, the step should be observed between energy levels from n to n+1 electron ionization. In detail, the probability for the transition of the electron from the valence band to the conduction band changes abruptly. In an international cooperation with the University of Vilnius the wavelength dependence of the LIDT was investigated for dielectric coatings of TxSi1-xO 2as a function of the stoichiometry. The measurements were performed for a wavelength range from 600 to 800 nm and at a pulse duration of 130 fs by using an OPA laser system. The step from two photon to three photon ionization was measured. The assumption of the mentioned behavior of the fs-damage was proven. For different concentrations of silicon and titanium in the oxide, the electronic structure of the material changes. The experiments have shown an increasing gap energy and LIDT for a high content of silica.

ASJC Scopus Sachgebiete

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Quantized behavior of the LIDT in the fs-range in dielectric layers. / Jupé, Marco; Jensen, Lars; Starke, Kai et al.
Laser-Induced Damage in Optical Materials: 2004: 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado. Bellingham: SPIE, 2005. S. 53-60 (Proceedings of SPIE - The International Society for Optical Engineering; Band 5647).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Jupé, M, Jensen, L, Starke, K, Ristau, D, Melninkaitis, A, Grigonis, R & Sirutkaitis, V 2005, Quantized behavior of the LIDT in the fs-range in dielectric layers. in Laser-Induced Damage in Optical Materials: 2004: 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado. Proceedings of SPIE - The International Society for Optical Engineering, Bd. 5647, SPIE, Bellingham, S. 53-60, 36th Annual Boulder Damage Symposium , Boulder, CO, USA / Vereinigte Staaten, 20 Sept. 2004. https://doi.org/10.1117/12.597993
Jupé, M., Jensen, L., Starke, K., Ristau, D., Melninkaitis, A., Grigonis, R., & Sirutkaitis, V. (2005). Quantized behavior of the LIDT in the fs-range in dielectric layers. In Laser-Induced Damage in Optical Materials: 2004: 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado (S. 53-60). (Proceedings of SPIE - The International Society for Optical Engineering; Band 5647). SPIE. https://doi.org/10.1117/12.597993
Jupé M, Jensen L, Starke K, Ristau D, Melninkaitis A, Grigonis R et al. Quantized behavior of the LIDT in the fs-range in dielectric layers. in Laser-Induced Damage in Optical Materials: 2004: 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado. Bellingham: SPIE. 2005. S. 53-60. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.597993
Jupé, Marco ; Jensen, Lars ; Starke, Kai et al. / Quantized behavior of the LIDT in the fs-range in dielectric layers. Laser-Induced Damage in Optical Materials: 2004: 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado. Bellingham : SPIE, 2005. S. 53-60 (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "In comparison to studies at longer pulse regimes, investigations of laser induced damage threshold indicate a contrary behavior on the fs-scale for the dielectric coatings. In general, experiments reveal an electronic cause of the damage. The strong correlation of theoretical calculations with experimental data of laser induced damage thresholds for quartz verifies this assumption. Consequently, the characteristic function of the wavelength dependence of the damage threshold differs in this range from the classical behavior. The quantized structure of the electronic transition leads to a typical step function of the LIDT in dependence on the band gap energy of the materials. Hence, the step should be observed between energy levels from n to n+1 electron ionization. In detail, the probability for the transition of the electron from the valence band to the conduction band changes abruptly. In an international cooperation with the University of Vilnius the wavelength dependence of the LIDT was investigated for dielectric coatings of TxSi1-xO 2as a function of the stoichiometry. The measurements were performed for a wavelength range from 600 to 800 nm and at a pulse duration of 130 fs by using an OPA laser system. The step from two photon to three photon ionization was measured. The assumption of the mentioned behavior of the fs-damage was proven. For different concentrations of silicon and titanium in the oxide, the electronic structure of the material changes. The experiments have shown an increasing gap energy and LIDT for a high content of silica.",
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AU - Jupé, Marco

AU - Jensen, Lars

AU - Starke, Kai

AU - Ristau, Detlev

AU - Melninkaitis, Andrius

AU - Grigonis, R.

AU - Sirutkaitis, Valdas

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