Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 2100085 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 258 |
| Ausgabenummer | 10 |
| Frühes Online-Datum | 20 Juli 2021 |
| Publikationsstatus | Veröffentlicht - 8 Okt. 2021 |
| Extern publiziert | Ja |
Abstract
While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 258, Nr. 10, 2100085, 08.10.2021.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters
AU - Rossow, Uwe
AU - Sidikejiang, Shawutijiang
AU - Hagag, Samar
AU - Horenburg, Philipp
AU - Henning, Philipp
AU - de Vasconcellos Lourenco, Rodrigo
AU - Bremers, Heiko
AU - Hangleiter, Andreas
N1 - Funding Information: The authors acknowledge F. A. Ketzer for help in PL measurement; Dr. A. Jaros, Dr. H. Spende, Professor Dr. T. Voß, and Professor Dr. A. Waag (IHT, TU Braunschweig) for preliminary μ‐photoluminescence and cathodoluminescence (CL) measurements; and Company Zeiss for transmission electron microscopy images. U.R. gratefully acknowledges DAAD for a travelling grant. Furthermore, the authors acknowledge fruitful discussions with Professor Dr. S. Kück (PTB), funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy, EXC‐2123 QuantumFrontiers, 390 837 967, and finally Physica Status Solidi (PSS) for 60th year of publishing our research.
PY - 2021/10/8
Y1 - 2021/10/8
N2 - While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.
AB - While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.
KW - low-pressure metal−organic vapor-phase epitaxy
KW - nitrides
KW - quantum wells
KW - semiconducting III−V materials
UR - http://www.scopus.com/inward/record.url?scp=85111900089&partnerID=8YFLogxK
U2 - 10.1002/pssb.202100085
DO - 10.1002/pssb.202100085
M3 - Article
AN - SCOPUS:85111900089
VL - 258
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 10
M1 - 2100085
ER -