Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2331-2333 |
| Seitenumfang | 3 |
| Fachzeitschrift | IEEE transactions on magnetics |
| Jahrgang | 37 |
| Ausgabenummer | 4 I |
| Publikationsstatus | Veröffentlicht - 1 Juli 2001 |
| Veranstaltung | 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, USA / Vereinigte Staaten Dauer: 7 Jan. 2001 → 11 Jan. 2001 |
Abstract
We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (∼25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesosocopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in our films.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE transactions on magnetics, Jahrgang 37, Nr. 4 I, 01.07.2001, S. 2331-2333.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Propagation of a magnetic domain wall in the presence of AFM fabricated defects
AU - Schumacher, H. W.
AU - Ravelosona, D.
AU - Cayssol, F.
AU - Wunderlich, J.
AU - Chappert, C.
AU - Mathet, V.
AU - Thiaville, A.
AU - Jamet, J. P.
AU - Ferré, J.
AU - Haug, R. J.
N1 - Funding information: Manuscript received October 12, 2000. This work was supported by the European Union TMR network SUB-MAGDEV and the Japanese NEDO grant, “Nanopatterned magnetic systems.” H. W. Schumacher, D. Ravelosona, F. Cayssol, J. Wunderlich, C. Chappert and C. Mathet are with Institut d’Elkectronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay, France (e-mail: schumach@ief.u-psud.fr). A. Thiaville, J.-P. Jamet and J. Ferré are with Laboratoire de Physique des solides, UMR CNRS 8602, Université Paris Sud, 91405 Orsay, France. R. J. Haug is with Institut für Festkörperphysik, Universität Hannover, Ap-pelstr. 2, 30167 Hannover, Germany. Publisher Item Identifier S 0018-9464(01)06777-2.
PY - 2001/7/1
Y1 - 2001/7/1
N2 - We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (∼25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesosocopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in our films.
AB - We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (∼25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesosocopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in our films.
KW - AFM lithography
KW - Domain wall pinning
KW - Extraordinary hall effect
KW - Magnetization reversal dynamics
UR - http://www.scopus.com/inward/record.url?scp=0035385945&partnerID=8YFLogxK
U2 - 10.1109/20.951163
DO - 10.1109/20.951163
M3 - Conference article
AN - SCOPUS:0035385945
VL - 37
SP - 2331
EP - 2333
JO - IEEE transactions on magnetics
JF - IEEE transactions on magnetics
SN - 0018-9464
IS - 4 I
T2 - 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag)
Y2 - 7 January 2001 through 11 January 2001
ER -