Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1069-1075 |
| Seitenumfang | 7 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 95 |
| Ausgabenummer | 4 |
| Frühes Online-Datum | 12 Jan. 2011 |
| Publikationsstatus | Veröffentlicht - Apr. 2011 |
Abstract
We report on RISE-EWT (Rear Interdigitated Single Evaporation-Emitter Wrap-Through) solar cells on full area (12.5×12.5 cm2) pseudo square boron doped Czochralski-grown silicon wafers. We investigate the main efficiency optimisation factors of these cells by investigating the dependence of RISE-EWT cell parameters on the base dopant concentration NA. We furthermore detail the effects of large feature sizes in base and emitter regions at the rear of the solar cell and investigate these effects with particular attention to the edge regions. EWT solar cells typically exhibit rather low fill factors. However, our results show that the improved fill factors can be achieved by increasing NA, which in return leads to optimised efficiency values. For our RISE-EWT solar cells made from boron doped Cz-Si wafers, this benefit is maintained even after light-induced degradation. Our investigation of edge area related effects shows the importance of proper cell design in these areas, leading to a further 2.8% absolute improvement in the fill factor. Combining increased base dopant concentration with optimised edge design, we achieve 19.0% efficiency on (12.5×12.5 cm2) boron doped Cz silicon wafers before light-induced degradation, resulting in 18.1% efficiency in the light-degraded state.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Solar Energy Materials and Solar Cells, Jahrgang 95, Nr. 4, 04.2011, S. 1069-1075.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Progress in emitter wrap-through solar cell fabrication on boron doped Czochralski-grown silicon
AU - Hermann, Sonja
AU - Merkle, Agnes
AU - Ulzhfer, Christian
AU - Dorn, Silke
AU - Feilhaber, Ilka
AU - Berger, Miriam
AU - Friedrich, Thomas
AU - Brendemhl, Till
AU - Harder, Nils Peter
AU - Ehlers, Lotte
AU - Weise, Katrin
AU - Meyer, Rüdiger
AU - Brendel, Rolf
N1 - Funding Information: We gratefully acknowledge the funding provided by the German State of Lower Saxony.
PY - 2011/4
Y1 - 2011/4
N2 - We report on RISE-EWT (Rear Interdigitated Single Evaporation-Emitter Wrap-Through) solar cells on full area (12.5×12.5 cm2) pseudo square boron doped Czochralski-grown silicon wafers. We investigate the main efficiency optimisation factors of these cells by investigating the dependence of RISE-EWT cell parameters on the base dopant concentration NA. We furthermore detail the effects of large feature sizes in base and emitter regions at the rear of the solar cell and investigate these effects with particular attention to the edge regions. EWT solar cells typically exhibit rather low fill factors. However, our results show that the improved fill factors can be achieved by increasing NA, which in return leads to optimised efficiency values. For our RISE-EWT solar cells made from boron doped Cz-Si wafers, this benefit is maintained even after light-induced degradation. Our investigation of edge area related effects shows the importance of proper cell design in these areas, leading to a further 2.8% absolute improvement in the fill factor. Combining increased base dopant concentration with optimised edge design, we achieve 19.0% efficiency on (12.5×12.5 cm2) boron doped Cz silicon wafers before light-induced degradation, resulting in 18.1% efficiency in the light-degraded state.
AB - We report on RISE-EWT (Rear Interdigitated Single Evaporation-Emitter Wrap-Through) solar cells on full area (12.5×12.5 cm2) pseudo square boron doped Czochralski-grown silicon wafers. We investigate the main efficiency optimisation factors of these cells by investigating the dependence of RISE-EWT cell parameters on the base dopant concentration NA. We furthermore detail the effects of large feature sizes in base and emitter regions at the rear of the solar cell and investigate these effects with particular attention to the edge regions. EWT solar cells typically exhibit rather low fill factors. However, our results show that the improved fill factors can be achieved by increasing NA, which in return leads to optimised efficiency values. For our RISE-EWT solar cells made from boron doped Cz-Si wafers, this benefit is maintained even after light-induced degradation. Our investigation of edge area related effects shows the importance of proper cell design in these areas, leading to a further 2.8% absolute improvement in the fill factor. Combining increased base dopant concentration with optimised edge design, we achieve 19.0% efficiency on (12.5×12.5 cm2) boron doped Cz silicon wafers before light-induced degradation, resulting in 18.1% efficiency in the light-degraded state.
KW - Cell design
KW - Cz silicon
KW - Emitter wrap-through
KW - Fill factor
KW - High-efficiency
UR - http://www.scopus.com/inward/record.url?scp=79951850889&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2010.12.004
DO - 10.1016/j.solmat.2010.12.004
M3 - Article
AN - SCOPUS:79951850889
VL - 95
SP - 1069
EP - 1075
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 4
ER -