TY - GEN

T1 - Process, geometry and stack related reliability of thick ALCU-metal-tracks

AU - Weide-Zaage, Kirsten

AU - Hein, Verena

N1 - Publisher Copyright: © 2018 SMTA. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/3/15

Y1 - 2018/3/15

N2 - The downscaling in VLSI systems and the use of new materials requires the development of new test structures and in the case of harsh environment conditions the change of the test conditions to higher applied currents and test temperatures. Furthermore the application in wider operating areas and more challenging mission profiles leads to a concept of highly robust metallization stacks [1] in a metal stack system up to eight levels. These stacks can contain a thick top metallization track for high current or RF application. Looking on the metallization systems of liners and cap materials as well as the current carrying metal themselves the differences in the coefficient of thermal expansion (CTE) of the materials lead to intrinsic tension and can result in fatal delamination of the metallization. Different failure mechanisms and complicate interaction of effects in the operating area can result. The reliability of thick metal tracks is still not in focus of considerations. But the mechanical stability especially at chip corner and edge as well as local higher electromigration (EM) can be critical. With the help of finite element analysis the thermal-electrical-mechanical behavior of metallization systems and new design concepts can be investigated. Furthermore migration effects can be analyzed and a comparison of simulated and obtained behavior can be done and support reliability assessment.

AB - The downscaling in VLSI systems and the use of new materials requires the development of new test structures and in the case of harsh environment conditions the change of the test conditions to higher applied currents and test temperatures. Furthermore the application in wider operating areas and more challenging mission profiles leads to a concept of highly robust metallization stacks [1] in a metal stack system up to eight levels. These stacks can contain a thick top metallization track for high current or RF application. Looking on the metallization systems of liners and cap materials as well as the current carrying metal themselves the differences in the coefficient of thermal expansion (CTE) of the materials lead to intrinsic tension and can result in fatal delamination of the metallization. Different failure mechanisms and complicate interaction of effects in the operating area can result. The reliability of thick metal tracks is still not in focus of considerations. But the mechanical stability especially at chip corner and edge as well as local higher electromigration (EM) can be critical. With the help of finite element analysis the thermal-electrical-mechanical behavior of metallization systems and new design concepts can be investigated. Furthermore migration effects can be analyzed and a comparison of simulated and obtained behavior can be done and support reliability assessment.

KW - Metallization

KW - Migration

KW - Reliability

KW - Simulation

KW - Thick metal

UR - http://www.scopus.com/inward/record.url?scp=85050758812&partnerID=8YFLogxK

U2 - 10.23919/panpacific.2018.8319008

DO - 10.23919/panpacific.2018.8319008

M3 - Conference contribution

AN - SCOPUS:85050758812

SP - 1

EP - 7

BT - 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018

Y2 - 5 February 2018 through 8 February 2018

ER -