Problems of contamination prior and during SI-MBE

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • G. Lippert
  • D. Krueger
  • H. P. Zeindl
  • J. Ramm
  • E. Bugiel
  • H. J. Osten

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksSurface Chemical Cleaning and Passivation for Semiconductor Processing
Herausgeber/-innenGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Seiten85-90
Seitenumfang6
PublikationsstatusVeröffentlicht - 1993
Extern publiziertJa
Veranstaltung1993 Spring Meeting of the Materials Research Society - San Francisco, USA / Vereinigte Staaten
Dauer: 13 Apr. 1993 → 15 Apr. 1993

Publikationsreihe

NameMaterials Research Society Symposium Proceedings
Band315
ISSN (Print)0272-9172

Abstract

The deposition of perfect growing layers requires an atomically clean surface. In this paper we will describe a new in situ cleaning technique which is able to reduce the temperature/time load of silicon substrates significantly. First we will investigate the efficiency of the in situ UV/ozone cleaning immediately before deposition. Such an UV/ozone treatment lowers the level of impurities below the detection limit of in situ XPS. The known recontamination if exposing to air after ex situ cleaning is prevented by this in situ technique. Nevertheless a significant contamination within the UHV chamber is detected by SIMS. A comparison of various UHV pumping systems (base pressure in the range of 10-8 Pa) shows the specific influence on recontamination at an atomically clean surface. A blocking mechanism by a thin oxide layer below (0.1 ML) to avoid the growth of stacking faults within an epitaxial silicon layer was successfully tested.

ASJC Scopus Sachgebiete

Zitieren

Problems of contamination prior and during SI-MBE. / Lippert, G.; Krueger, D.; Zeindl, H. P. et al.
Surface Chemical Cleaning and Passivation for Semiconductor Processing. Hrsg. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. 1993. S. 85-90 (Materials Research Society Symposium Proceedings; Band 315).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Lippert, G, Krueger, D, Zeindl, HP, Ramm, J, Bugiel, E & Osten, HJ 1993, Problems of contamination prior and during SI-MBE. in GS Higashi, EA Irene & T Ohmi (Hrsg.), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, Bd. 315, S. 85-90, 1993 Spring Meeting of the Materials Research Society, San Francisco, California, USA / Vereinigte Staaten, 13 Apr. 1993.
Lippert, G., Krueger, D., Zeindl, H. P., Ramm, J., Bugiel, E., & Osten, H. J. (1993). Problems of contamination prior and during SI-MBE. In G. S. Higashi, E. A. Irene, & T. Ohmi (Hrsg.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (S. 85-90). (Materials Research Society Symposium Proceedings; Band 315).
Lippert G, Krueger D, Zeindl HP, Ramm J, Bugiel E, Osten HJ. Problems of contamination prior and during SI-MBE. in Higashi GS, Irene EA, Ohmi T, Hrsg., Surface Chemical Cleaning and Passivation for Semiconductor Processing. 1993. S. 85-90. (Materials Research Society Symposium Proceedings).
Lippert, G. ; Krueger, D. ; Zeindl, H. P. et al. / Problems of contamination prior and during SI-MBE. Surface Chemical Cleaning and Passivation for Semiconductor Processing. Hrsg. / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. 1993. S. 85-90 (Materials Research Society Symposium Proceedings).
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Download

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