Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 129-135 |
| Seitenumfang | 7 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 179 |
| Frühes Online-Datum | 16 Nov. 2017 |
| Publikationsstatus | Veröffentlicht - 1 Juni 2018 |
Abstract
We demonstrate the application of a liquid-processed doped silicon precursor as a doping source for the fabrication of interdigitated back contact solar cells. We integrate phosphorus- as well as boron-doped liquid silicon in our n-type interdigitated back contact cell process based on laser-structuring. The cell with the phosphorus back surface field from liquid silicon has an efficiency of 20.9% and the cell with the boron emitter from liquid silicon has an efficiency of 21.9%. We measure saturation current densities of 34 fA cm−2 on phosphorus-doped layers with a sheet resistance of 108 Ω/sq and 18 fA cm−2 on boron-doped layers with a sheet resistance of 140 Ω/sq using passivated test samples.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Solar Energy Materials and Solar Cells, Jahrgang 179, 01.06.2018, S. 129-135.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Printable liquid silicon for local doping of solar cells
AU - Haase, Felix
AU - Lim, Bianca
AU - Merkle, Agnes
AU - Dullweber, Thorsten
AU - Brendel, Rolf
AU - Günther, Christian
AU - Holthausen, Michael H.
AU - Mader, Christoph
AU - Wunnicke, Odo
AU - Peibst, Robby
N1 - Publisher Copyright: © 2017 Elsevier B.V. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - We demonstrate the application of a liquid-processed doped silicon precursor as a doping source for the fabrication of interdigitated back contact solar cells. We integrate phosphorus- as well as boron-doped liquid silicon in our n-type interdigitated back contact cell process based on laser-structuring. The cell with the phosphorus back surface field from liquid silicon has an efficiency of 20.9% and the cell with the boron emitter from liquid silicon has an efficiency of 21.9%. We measure saturation current densities of 34 fA cm−2 on phosphorus-doped layers with a sheet resistance of 108 Ω/sq and 18 fA cm−2 on boron-doped layers with a sheet resistance of 140 Ω/sq using passivated test samples.
AB - We demonstrate the application of a liquid-processed doped silicon precursor as a doping source for the fabrication of interdigitated back contact solar cells. We integrate phosphorus- as well as boron-doped liquid silicon in our n-type interdigitated back contact cell process based on laser-structuring. The cell with the phosphorus back surface field from liquid silicon has an efficiency of 20.9% and the cell with the boron emitter from liquid silicon has an efficiency of 21.9%. We measure saturation current densities of 34 fA cm−2 on phosphorus-doped layers with a sheet resistance of 108 Ω/sq and 18 fA cm−2 on boron-doped layers with a sheet resistance of 140 Ω/sq using passivated test samples.
KW - Back-contact solar cell
KW - Local doping
KW - Out diffused emitters
KW - Printable silicon
UR - http://www.scopus.com/inward/record.url?scp=85034440358&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2017.11.003
DO - 10.1016/j.solmat.2017.11.003
M3 - Article
AN - SCOPUS:85034440358
VL - 179
SP - 129
EP - 135
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -