Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6809846 |
| Seiten (von - bis) | 1018-1024 |
| Seitenumfang | 7 |
| Fachzeitschrift | IEEE journal of photovoltaics |
| Jahrgang | 4 |
| Ausgabenummer | 4 |
| Frühes Online-Datum | 2 Mai 2014 |
| Publikationsstatus | Veröffentlicht - Juli 2014 |
Abstract
We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 m Ω ·cm2, and their tear-off stress is 27.6 kPa.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 4, Nr. 4, 6809846, 07.2014, S. 1018-1024.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Principle of module-level processing demonstrated at single a-Si:H/c-Si Heterojunction solar cells
AU - Petermann, Jan Hendrik
AU - Schulte-Huxel, Henning
AU - Steckenreiter, Verena
AU - Kajari-Schröder, Sarah
AU - Brendel, Rolf
PY - 2014/7
Y1 - 2014/7
N2 - We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 m Ω ·cm2, and their tear-off stress is 27.6 kPa.
AB - We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 m Ω ·cm2, and their tear-off stress is 27.6 kPa.
KW - Contact recombination velocity
KW - heterojunction
KW - hybrid silicon
KW - laser-fired and bonding contacts (LFBCs)
KW - module-level processing
KW - silicone
UR - http://www.scopus.com/inward/record.url?scp=84903313254&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2014.2314576
DO - 10.1109/JPHOTOV.2014.2314576
M3 - Article
AN - SCOPUS:84903313254
VL - 4
SP - 1018
EP - 1024
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 4
M1 - 6809846
ER -