Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 316-320 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 7 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 10 Juli 2010 |
| Veranstaltung | 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12 - Weimar, Deutschland Dauer: 5 Juli 2009 → 10 Juli 2009 Konferenznummer: 12 |
Abstract
We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n- Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultrathin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr 0.3O. This demonstrates the importance of both chemical and structural interface effects.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 7, Nr. 2, 10.07.2010, S. 316-320.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics
AU - Müller-Sajak, D.
AU - Cosceev, Alexandr
AU - Brand, C.
AU - Hofmann, Karl Rüdiger
AU - Pfnür, Herbert
N1 - Conference code: 12
PY - 2010/7/10
Y1 - 2010/7/10
N2 - We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n- Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultrathin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr 0.3O. This demonstrates the importance of both chemical and structural interface effects.
AB - We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n- Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultrathin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr 0.3O. This demonstrates the importance of both chemical and structural interface effects.
UR - http://www.scopus.com/inward/record.url?scp=77954321985&partnerID=8YFLogxK
U2 - 10.1002/pssc.200982477
DO - 10.1002/pssc.200982477
M3 - Conference article
AN - SCOPUS:77954321985
VL - 7
SP - 316
EP - 320
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 2
T2 - 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12
Y2 - 5 July 2009 through 10 July 2009
ER -