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Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autorschaft

  • Th Wetzel
  • J. Virbulis
  • A. Muiznieks
  • W. Von Ammon

Organisationseinheiten

Externe Organisationen

  • Siltronic AG
  • University of Latvia
  • Center for Processes Analysis and Research

Details

OriginalspracheEnglisch
Seiten (von - bis)34-39
Seitenumfang6
FachzeitschriftJournal of crystal growth
Jahrgang266
Ausgabenummer1-3
Frühes Online-Datum25 März 2004
PublikationsstatusVeröffentlicht - 15 Mai 2004
VeranstaltungFourth International Workshop on Modeling - Kyushu, Japan
Dauer: 4 Nov. 20037 Nov. 2003

Abstract

A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.

ASJC Scopus Sachgebiete

Zitieren

Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. / Wetzel, Th; Virbulis, J.; Muiznieks, A. et al.
in: Journal of crystal growth, Jahrgang 266, Nr. 1-3, 15.05.2004, S. 34-39.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Wetzel, T, Virbulis, J, Muiznieks, A, Von Ammon, W, Tomzig, E, Raming, G & Weber, M 2004, 'Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth', Journal of crystal growth, Jg. 266, Nr. 1-3, S. 34-39. https://doi.org/10.1016/j.jcrysgro.2004.02.027
Wetzel, T., Virbulis, J., Muiznieks, A., Von Ammon, W., Tomzig, E., Raming, G., & Weber, M. (2004). Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. Journal of crystal growth, 266(1-3), 34-39. https://doi.org/10.1016/j.jcrysgro.2004.02.027
Wetzel T, Virbulis J, Muiznieks A, Von Ammon W, Tomzig E, Raming G et al. Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. Journal of crystal growth. 2004 Mai 15;266(1-3):34-39. Epub 2004 Mär 25. doi: 10.1016/j.jcrysgro.2004.02.027
Wetzel, Th ; Virbulis, J. ; Muiznieks, A. et al. / Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. in: Journal of crystal growth. 2004 ; Jahrgang 266, Nr. 1-3. S. 34-39.
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AU - Wetzel, Th

AU - Virbulis, J.

AU - Muiznieks, A.

AU - Von Ammon, W.

AU - Tomzig, E.

AU - Raming, G.

AU - Weber, M.

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KW - A2. Czochralski method

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