Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | PHYSICS OF SEMICONDUCTORS |
| Untertitel | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
| Seiten | 715-716 |
| Seitenumfang | 2 |
| Publikationsstatus | Veröffentlicht - 30 Juni 2005 |
| Veranstaltung | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, USA / Vereinigte Staaten Dauer: 26 Juli 2004 → 30 Juli 2004 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 772 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above ∼1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. S. 715-716 (AIP Conference Proceedings; Band 772).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Polaronic effects in optical transitions of single InAs/AlAs quantum dots
AU - Sarkar, D.
AU - Van Der Meulen, H. P.
AU - Calleja, J. M.
AU - Becker, J. M.
AU - Haug, R. J.
AU - Pierz, K.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above ∼1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.
AB - Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above ∼1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.
UR - http://www.scopus.com/inward/record.url?scp=33749504192&partnerID=8YFLogxK
U2 - 10.1063/1.1994306
DO - 10.1063/1.1994306
M3 - Conference contribution
AN - SCOPUS:33749504192
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 715
EP - 716
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -