Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Physics of Semiconductors |
| Untertitel | 29th International Conference, ICPS 29 |
| Seiten | 299-300 |
| Seitenumfang | 2 |
| Publikationsstatus | Veröffentlicht - 15 Jan. 2010 |
| Veranstaltung | 29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brasilien Dauer: 27 Juli 2008 → 1 Aug. 2008 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 1199 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
Micro-photoluminescence spectroscopy for varying temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. A broad sideband at 1.2 meV of the zero phonon line is attributed to the exciton-acoustic phonon interaction via deformation potential coupling. The piezoelectric coupling of the exciton to long-wavelength phonons is also observed and gives rise to a narrow low-energy sideband at about 0.25 meV of the zero-phonon line. This band strengthens with decreasing density of photocreated free carriers, since they screen out the piezoelectric coupling mechanism.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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Physics of Semiconductors: 29th International Conference, ICPS 29. 2010. S. 299-300 (AIP Conference Proceedings; Band 1199).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Piezoelectric Screening in Single InAs/AlAs Quantum Dots
AU - Sarkar, D.
AU - Van Der Meulen, H. P.
AU - Calleja, J. M.
AU - Meyer, J. M.
AU - Haug, R. J.
AU - Pierz, K.
PY - 2010/1/15
Y1 - 2010/1/15
N2 - Micro-photoluminescence spectroscopy for varying temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. A broad sideband at 1.2 meV of the zero phonon line is attributed to the exciton-acoustic phonon interaction via deformation potential coupling. The piezoelectric coupling of the exciton to long-wavelength phonons is also observed and gives rise to a narrow low-energy sideband at about 0.25 meV of the zero-phonon line. This band strengthens with decreasing density of photocreated free carriers, since they screen out the piezoelectric coupling mechanism.
AB - Micro-photoluminescence spectroscopy for varying temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. A broad sideband at 1.2 meV of the zero phonon line is attributed to the exciton-acoustic phonon interaction via deformation potential coupling. The piezoelectric coupling of the exciton to long-wavelength phonons is also observed and gives rise to a narrow low-energy sideband at about 0.25 meV of the zero-phonon line. This band strengthens with decreasing density of photocreated free carriers, since they screen out the piezoelectric coupling mechanism.
KW - Exciton-phonon interaction
KW - III-V semiconductors
KW - Photoluminescence
KW - Piezoelectricity
KW - Quantum dots
UR - http://www.scopus.com/inward/record.url?scp=74849132249&partnerID=8YFLogxK
U2 - 10.1063/1.3295419
DO - 10.1063/1.3295419
M3 - Conference contribution
AN - SCOPUS:74849132249
SN - 9780735407367
T3 - AIP Conference Proceedings
SP - 299
EP - 300
BT - Physics of Semiconductors
T2 - 29th International Conference on Physics of Semiconductors, ICPS 29
Y2 - 27 July 2008 through 1 August 2008
ER -