Picosecond spectroscopy of plastically deformed GaAs

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Autoren

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  • Max-Planck-Institut für Festkörperforschung
  • Universität zu Köln
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Details

OriginalspracheEnglisch
Seiten (von - bis)123-126
Seitenumfang4
FachzeitschriftJournal of Luminescence
Jahrgang58
Ausgabenummer1-6
PublikationsstatusVeröffentlicht - Jan. 1994
Extern publiziertJa

Abstract

We investigate the dependence of carrier lifetime in compressed semi-insulating GaAs on defect concentration, excitation intensity, and temperature by means of time-resolved photoluminescence spectroscopy. The carrier lifetime decreases from 240 ps over 50 ps down to 10 ps as the arsenic antisite defect concentration increases from 0.41016 cm-3 over 2.01016 cm-3 to 10.01016 cm-3.

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Picosecond spectroscopy of plastically deformed GaAs. / Oestreich, Michael; Rühle, Wolfgang W.; Krüger, J. et al.
in: Journal of Luminescence, Jahrgang 58, Nr. 1-6, 01.1994, S. 123-126.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Oestreich M, Rühle WW, Krüger J, Alexander H. Picosecond spectroscopy of plastically deformed GaAs. Journal of Luminescence. 1994 Jan;58(1-6):123-126. doi: 10.1016/0022-2313(94)90376-X
Oestreich, Michael ; Rühle, Wolfgang W. ; Krüger, J. et al. / Picosecond spectroscopy of plastically deformed GaAs. in: Journal of Luminescence. 1994 ; Jahrgang 58, Nr. 1-6. S. 123-126.
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AU - Oestreich, Michael

AU - Rühle, Wolfgang W.

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AU - Alexander, H.

N1 - Funding information: We wish to thank K. Rother and H. Klann for expert technical assistance. The partial financial support of the Bundesministerium für Forschung und Technologie is gratefully acknowledged.

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N2 - We investigate the dependence of carrier lifetime in compressed semi-insulating GaAs on defect concentration, excitation intensity, and temperature by means of time-resolved photoluminescence spectroscopy. The carrier lifetime decreases from 240 ps over 50 ps down to 10 ps as the arsenic antisite defect concentration increases from 0.41016 cm-3 over 2.01016 cm-3 to 10.01016 cm-3.

AB - We investigate the dependence of carrier lifetime in compressed semi-insulating GaAs on defect concentration, excitation intensity, and temperature by means of time-resolved photoluminescence spectroscopy. The carrier lifetime decreases from 240 ps over 50 ps down to 10 ps as the arsenic antisite defect concentration increases from 0.41016 cm-3 over 2.01016 cm-3 to 10.01016 cm-3.

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