Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Lukas Max Weituschat
  • Walter Dickmann
  • Joaquín Guimbao
  • Daniel Ramos
  • Stefanie Kroker
  • Pablo Aitor Postigo

Externe Organisationen

  • Campus of International Excellence (CEI) UAM+CSIC
  • Physikalisch-Technische Bundesanstalt (PTB)
  • Technische Universität Braunschweig
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Details

OriginalspracheEnglisch
Aufsatznummer934
FachzeitschriftNanomaterials
Jahrgang10
Ausgabenummer5
PublikationsstatusVeröffentlicht - Mai 2020
Extern publiziertJa

Abstract

Staying in control of delicate processes in the evermore emerging field of micro, nano and quantum-technologies requires suitable devices to measure temperature and temperature flows with high thermal and spatial resolution. In this work, we design optical microring resonators (ORRs) made of different materials (silicon, diamond and gallium nitride) and simulate their temperature behavior using several finite-element methods. We predict the resonance frequencies of the designed devices and their temperature-induced shift (16.8 pm K−1 for diamond, 68.2 pm K−1 for silicon and 30.4 pm K−1 for GaN). In addition, the influence of two-photon-absorption (TPA) and the associated self-heating on the accuracy of the temperature measurement is analysed. The results show that owing to the absence of intrinsic TPA-processes self-heating at resonance is less critical in diamond and GaN than in silicon, with the threshold intensity Ith = α/β, α and β being the linear and quadratic absorption coefficients, respectively.

ASJC Scopus Sachgebiete

Zitieren

Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing. / Weituschat, Lukas Max; Dickmann, Walter; Guimbao, Joaquín et al.
in: Nanomaterials, Jahrgang 10, Nr. 5, 934, 05.2020.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Weituschat, LM, Dickmann, W, Guimbao, J, Ramos, D, Kroker, S & Postigo, PA 2020, 'Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing', Nanomaterials, Jg. 10, Nr. 5, 934. https://doi.org/10.3390/nano10050934
Weituschat, L. M., Dickmann, W., Guimbao, J., Ramos, D., Kroker, S., & Postigo, P. A. (2020). Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing. Nanomaterials, 10(5), Artikel 934. https://doi.org/10.3390/nano10050934
Weituschat LM, Dickmann W, Guimbao J, Ramos D, Kroker S, Postigo PA. Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing. Nanomaterials. 2020 Mai;10(5):934. doi: 10.3390/nano10050934
Weituschat, Lukas Max ; Dickmann, Walter ; Guimbao, Joaquín et al. / Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing. in: Nanomaterials. 2020 ; Jahrgang 10, Nr. 5.
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title = "Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing",
abstract = "Staying in control of delicate processes in the evermore emerging field of micro, nano and quantum-technologies requires suitable devices to measure temperature and temperature flows with high thermal and spatial resolution. In this work, we design optical microring resonators (ORRs) made of different materials (silicon, diamond and gallium nitride) and simulate their temperature behavior using several finite-element methods. We predict the resonance frequencies of the designed devices and their temperature-induced shift (16.8 pm K−1 for diamond, 68.2 pm K−1 for silicon and 30.4 pm K−1 for GaN). In addition, the influence of two-photon-absorption (TPA) and the associated self-heating on the accuracy of the temperature measurement is analysed. The results show that owing to the absence of intrinsic TPA-processes self-heating at resonance is less critical in diamond and GaN than in silicon, with the threshold intensity Ith = α/β, α and β being the linear and quadratic absorption coefficients, respectively.",
keywords = "Diamond, Finite-element-simulation, Gallium nitride, Optical ring resonator, Self-heating, Silicon, Temperature sensor, Thermal modelling, Two-photon absorption",
author = "Weituschat, {Lukas Max} and Walter Dickmann and Joaqu{\'i}n Guimbao and Daniel Ramos and Stefanie Kroker and Postigo, {Pablo Aitor}",
note = "Funding information: Research funded by European Association of National Metrology Institutes (JRP f14 PhotOQuanT—17FUN05). This project has received funding from the EMPIR programme co-financed by the Participating States and from the European Union{\textquoteright}s Horizon 2020 research and innovation programme. The authors gratefully acknowledge support by the DFG research training group GrK1952/1 “Metrology for Complex Nanosystems”.",
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T1 - Photonic and thermal modelling of microrings in silicon, diamond and GaN for temperature sensing

AU - Weituschat, Lukas Max

AU - Dickmann, Walter

AU - Guimbao, Joaquín

AU - Ramos, Daniel

AU - Kroker, Stefanie

AU - Postigo, Pablo Aitor

N1 - Funding information: Research funded by European Association of National Metrology Institutes (JRP f14 PhotOQuanT—17FUN05). This project has received funding from the EMPIR programme co-financed by the Participating States and from the European Union’s Horizon 2020 research and innovation programme. The authors gratefully acknowledge support by the DFG research training group GrK1952/1 “Metrology for Complex Nanosystems”.

PY - 2020/5

Y1 - 2020/5

N2 - Staying in control of delicate processes in the evermore emerging field of micro, nano and quantum-technologies requires suitable devices to measure temperature and temperature flows with high thermal and spatial resolution. In this work, we design optical microring resonators (ORRs) made of different materials (silicon, diamond and gallium nitride) and simulate their temperature behavior using several finite-element methods. We predict the resonance frequencies of the designed devices and their temperature-induced shift (16.8 pm K−1 for diamond, 68.2 pm K−1 for silicon and 30.4 pm K−1 for GaN). In addition, the influence of two-photon-absorption (TPA) and the associated self-heating on the accuracy of the temperature measurement is analysed. The results show that owing to the absence of intrinsic TPA-processes self-heating at resonance is less critical in diamond and GaN than in silicon, with the threshold intensity Ith = α/β, α and β being the linear and quadratic absorption coefficients, respectively.

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