Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 119-122 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 224 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 1 März 2001 |
Abstract
Self-organized InAs quantum dots (QDs) embedded in an AlAs matrix are investigated by photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). For InAs coverage of about 20 ML, a PL peak is observed at energies slightly below 1.6 eV and attributed to radiative recombination from the QD ground states. At higher excitation intensity two additional peaks occur at 80 and 140 meV above the ground state, which we attribute to PL from excited QD states. Transmission electron microscopy (TEM) images show a high QD density of 1 × 1012 cm-2 resulting in small inter-dot distances, which hints to lateral coupling of the QDs.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 224, Nr. 1, 01.03.2001, S. 119-122.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Photoluminescence study of InAs/AlAs quantum dots
AU - Pierz, K.
AU - Miglo, A.
AU - Hinze, P.
AU - Ahlers, F. J.
AU - Ade, G.
AU - Harke-Wurst, I.
AU - Zeitler, U.
AU - Haug, R. J.
PY - 2001/3/1
Y1 - 2001/3/1
N2 - Self-organized InAs quantum dots (QDs) embedded in an AlAs matrix are investigated by photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). For InAs coverage of about 20 ML, a PL peak is observed at energies slightly below 1.6 eV and attributed to radiative recombination from the QD ground states. At higher excitation intensity two additional peaks occur at 80 and 140 meV above the ground state, which we attribute to PL from excited QD states. Transmission electron microscopy (TEM) images show a high QD density of 1 × 1012 cm-2 resulting in small inter-dot distances, which hints to lateral coupling of the QDs.
AB - Self-organized InAs quantum dots (QDs) embedded in an AlAs matrix are investigated by photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). For InAs coverage of about 20 ML, a PL peak is observed at energies slightly below 1.6 eV and attributed to radiative recombination from the QD ground states. At higher excitation intensity two additional peaks occur at 80 and 140 meV above the ground state, which we attribute to PL from excited QD states. Transmission electron microscopy (TEM) images show a high QD density of 1 × 1012 cm-2 resulting in small inter-dot distances, which hints to lateral coupling of the QDs.
UR - http://www.scopus.com/inward/record.url?scp=0000044405&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(200103)224:1<119::AID-PSSB119>3.0.CO;2-W
DO - 10.1002/1521-3951(200103)224:1<119::AID-PSSB119>3.0.CO;2-W
M3 - Article
AN - SCOPUS:0000044405
VL - 224
SP - 119
EP - 122
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 1
ER -