Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 117-119 |
Seitenumfang | 3 |
Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
Jahrgang | 17 |
Ausgabenummer | 1-4 |
Publikationsstatus | Veröffentlicht - 25 Feb. 2003 |
Veranstaltung | International Conference on Superlattices - ICSNN 2002 - Touluse, Frankreich Dauer: 22 Juli 2002 → 26 Juli 2002 |
Abstract
We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 17, Nr. 1-4, 25.02.2003, S. 117-119.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
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TY - JOUR
T1 - Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density
AU - Ma, Z.
AU - Pierz, K.
AU - Keyser, U. F.
AU - Haug, R. J.
N1 - Funding information: This work was supported by the Deutsche Forschungsgemeinschaft (DFG), Grant Nos. Pi385/1-2 and Ha1826/5-2.
PY - 2003/2/25
Y1 - 2003/2/25
N2 - We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.
AB - We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.
KW - InAs/AlAs
KW - Photoluminescence
KW - Quantum dots
KW - Self-assembled quantum dots
UR - http://www.scopus.com/inward/record.url?scp=0037391580&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00737-3
DO - 10.1016/S1386-9477(02)00737-3
M3 - Conference article
AN - SCOPUS:0037391580
VL - 17
SP - 117
EP - 119
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
T2 - International Conference on Superlattices - ICSNN 2002
Y2 - 22 July 2002 through 26 July 2002
ER -