Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 245-247 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 2 |
| Ausgabenummer | 6 |
| Frühes Online-Datum | 12 Sept. 2008 |
| Publikationsstatus | Veröffentlicht - Dez. 2008 |
| Extern publiziert | Ja |
Abstract
We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconduc-tance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi - Rapid Research Letters, Jahrgang 2, Nr. 6, 12.2008, S. 245-247.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon
AU - Herlufsen, Sandra
AU - Schmidt, Jan
AU - Hinken, David
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Funding Information: This work was funded by the German State of Lower Saxony and the German Federal Ministry for the Environment, Nature Conservation, and Nuclear Safety (BMU) under contract no. 0327650C.
PY - 2008/12
Y1 - 2008/12
N2 - We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconduc-tance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements.
AB - We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconduc-tance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements.
UR - http://www.scopus.com/inward/record.url?scp=67650782991&partnerID=8YFLogxK
U2 - 10.1002/pssr.200802192
DO - 10.1002/pssr.200802192
M3 - Article
AN - SCOPUS:67650782991
VL - 2
SP - 245
EP - 247
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 6
ER -