Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • G. Lippert
  • H. J. Osten
  • D. Krüger

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)304-307
Seitenumfang4
FachzeitschriftJournal of crystal growth
Jahrgang157
Ausgabenummer1-4
PublikationsstatusVeröffentlicht - Dez. 1995
Extern publiziertJa

Abstract

Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga "memory effect" of the UHV equipment.

ASJC Scopus Sachgebiete

Zitieren

Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source. / Lippert, G.; Osten, H. J.; Krüger, D.
in: Journal of crystal growth, Jahrgang 157, Nr. 1-4, 12.1995, S. 304-307.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Lippert G, Osten HJ, Krüger D. Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source. Journal of crystal growth. 1995 Dez;157(1-4):304-307. doi: 10.1016/0022-0248(95)00337-1
Lippert, G. ; Osten, H. J. ; Krüger, D. / Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source. in: Journal of crystal growth. 1995 ; Jahrgang 157, Nr. 1-4. S. 304-307.
Download
@article{d375d1370af74792b783553d92c95409,
title = "Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source",
abstract = "Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga {"}memory effect{"} of the UHV equipment.",
author = "G. Lippert and Osten, {H. J.} and D. Kr{\"u}ger",
year = "1995",
month = dec,
doi = "10.1016/0022-0248(95)00337-1",
language = "English",
volume = "157",
pages = "304--307",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

Download

TY - JOUR

T1 - Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source

AU - Lippert, G.

AU - Osten, H. J.

AU - Krüger, D.

PY - 1995/12

Y1 - 1995/12

N2 - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga "memory effect" of the UHV equipment.

AB - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga "memory effect" of the UHV equipment.

UR - http://www.scopus.com/inward/record.url?scp=0029633684&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00337-1

DO - 10.1016/0022-0248(95)00337-1

M3 - Article

AN - SCOPUS:0029633684

VL - 157

SP - 304

EP - 307

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1-4

ER -